Collective behavior of interwell excitons in GaAs/AlGaAs double quantum wells

Larionov, A. V.; Тимофеев, В. Б.; Hvam, Jørn Märcher; Soerensen, C.

doi:10.1134/1.568294

Cited by 22 publications

(28 citation statements)

References 13 publications

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“…7 It was found that shortly after zero delay, the IE PL is strongly circularly polarized ͑more than 60%͒, following the polarization of the exciting laser, and has a full width at half maximum of about 3 meV. As the delay increases the PL line narrows and shifts toward the long-wavelength part of the spectrum.…”

Section: B Experimental Resultsmentioning

confidence: 99%

“…In addition to our previous work, 7 we have observed a further peculiarity which is a strong argument for the coherence of the dense IE gas, namely, a strong reduction of the spin relaxation rate upon reaching critical conditions. We also provide a theoretical modeling for the IE spin flip at low temperatures.…”

Section: Introductionmentioning

confidence: 86%

“…7 Our claim is based on Ref. 12 where the spin relaxation rate of Bose condensates of atoms in traps was studied.…”

Section: Discussionmentioning

confidence: 99%

“…7 Experimental findings such as strong narrowing of the IEs photoluminescence ͑PL͒ line, drastic increasing of its circular polarization degree, and high sensitivity with respect to temperature have been associated with the formation of an IE collective dielectric phase. Later it was shown that if critical conditions are satisfied the IE collective phase is most likely to occur in domain regions with lateral confinement.…”

Section: Introductionmentioning

confidence: 99%

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Coherent spin dynamics of an interwell excitonic gas inGaAs∕AlGaAscoupled quantum wells

et al. 2006

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Section: B Experimental Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 86%

“…7 Our claim is based on Ref. 12 where the spin relaxation rate of Bose condensates of atoms in traps was studied.…”

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Coherent spin dynamics of an interwell excitonic gas inGaAs∕AlGaAscoupled quantum wells

et al. 2006

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“…1b and 1c, corre spondingly. The lower scale here corresponds to the Stark energy shift between 1sHH exciton levels in the neighboring quantum wells (see, e.g., [13]). In the studied CQW the electron hole recombination time is much longer then the measured time (τ rec ӷ T 2 ).…”

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confidence: 99%

Influence of electron localization on the spin dephasing anisotropy in bias GaAs/AlGaAs coupled quantum wells

Sekretenko

Larionov

2012

Jetp Lett.

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A lot of spintronic investigations deal with a control of electron spin decoherence and relaxation rate by means of electric and magnetic fields, temperature and structural features of semiconductor nanostruc tures [1]. It is also necessary to know spin relaxation mechanism and as far as possible to affect it. The main mechanism of spin relaxation in GaAs based quantum wells (QWs) is the D'yakonov-Perel' kinetic mecha nism [2]. It is caused by the lack of inversion center: (i) in the bulk semiconductor of which the system is made (bulk inversion asymmetry, or BIA), (ii) in the hetero structure (structure inversion asymmetry, or SIA) and (iii) in the chemical bonds at heterointerfaces (inter face inversion asymmetry, or IIA) [2][3][4]. Structure inversion asymmetry can be caused by an external electric field or by deformation, BIA and IIA depend strongly on a size of carrier confinement. Therefore, spin relaxation times can be controlled by gate voltage or by special heterostructure design.Earlier it was theoretically predicted [5] that anisotropy of electron spin relaxation could be observed in III-V nanostructures grown along the axis [001]. It has been demonstrated that the lifetimes of spins oriented along the axes [110], [ ], and [001] are different. In particular, by changing the relation between SIA and BIA one can achieve a total suppres sion of relaxation for the spin oriented along one of [110] axes. Detailed calculations [6] confirmed that the spin relaxation anisotropy exists in real semicon ductor heterostructures. The implementation of such idea to control spin relaxation times gives new oppor tunities for spintronics. The mentioned anisotropy was observed in several experiments [7][8][9]. ¶ The article is published in the original. 110Among the quasi two dimensional objects based on semiconductor heterostructures, coupled quantum wells (CQW) with bias are of special interest because they provide spatial separation of photoexcited elec trons and holes in neighboring quantum wells. GaAs/AlGaAs CQW with bias allow one to tune the electron hole overlap integral through the tunneling barrier height and hence to control the electrons escape from a quantum well due to radiative annihila tion with holes. Additionally, such nanostructures are capable of affecting the structure inversion asymmetry, which is useful for controlling the electron spin relax ation mechanism [10].In reality all the semiconductor heterostructures have different types of crystal imperfection-residual impurities, interface fluctuations and others which cause random potential fluctuations. This results in the localization of electrons in the quantum well plane. It was recently shown that localized and nonlo calized electrons can have dramatically different spin dephasing times [11]. In addition authors of [12] have discovered that the carrier localization leads to the sat uration of spin relaxation times at 45 ns for electrons below 4.5 K and at 2 ns for holes below 2.3 K in a n doped (In,Ga)As/GaAs quantum well.Our previous study [10...

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