Collector-top GaAs/AlGaAs heterojunction bipolar transistors for high-speed digital ICs

Morizuka, K.; Nozu, T.; Tsuda, Koji; Azuma, Makoto

doi:10.1049/el:19860216

Cited by 22 publications

(2 citation statements)

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“…Generally, methodologies have been reported to achieve the suppression. The formation of a higher barrier or highresistivity layer buried in the extrinsic base-emitter junction can be achieved by using oxygen-ion implantation, oxidation confinement and selective undercut etching [8][9][10][11][12][13]. Since the ion-implantation technique has typically been used in conventional C-up HBTs to achieve the high-resistivity layer, however, the devices will suffer an increase in extrinsic base resistance, and the defects are considered to degrade the reliability of the device characteristics [14].…”

Section: Introductionmentioning

confidence: 99%

A collector-up heterojunction bipolar transistor using a p-type doping buried layer

Hsu¹,

Hsin²

2006

Semicond. Sci. Technol.

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In this paper, we report a collector-up npn heterojunction bipolar transistor (C-up HBT) which employs a p-type doping buried layer inserted between an extrinsic emitter and a subemitter for current confinement. Fabrication of C-up AlGaAs/GaAs HBTs with a selectively buried layer by metalorganic chemical vapour deposition (MOCVD) regrowth is described. The fabricated C-up AlGaAs/GaAs HBT demonstrates good common-emitter I-V characteristics and a current gain of 18. A systematic analysis is performed to verify the functionality of the p-type doping buried layer using a two-dimensional device simulator. It is found that the p-type doping buried layer should be biased properly to achieve the high efficiency of current confinement. And the HBT with a large E V at the base-emitter heterojunction is preferred for the proposed C-up HBTs to reduce hole back-injection.

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Section: Introductionmentioning

confidence: 99%

A collector-up heterojunction bipolar transistor using a p-type doping buried layer

Hsu¹,

Hsin²

2006

Semicond. Sci. Technol.

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“…Especially in nonsaturation operations, the benefit of the C-top HBT is remarkable. Recently, noticeable progress of the C-top HBT has been made and a propagation delay time of 6 3 ps in the DCTL ring oscillator [ 6 ] and 4 K gate array L with an I L structure [ 7 ] have been reported. This paper investigates the performance difference between the logic circuits of C-top and E-top HBT's, with simulation of switching characteristics and divide-byfour circuit properties.…”

Section: Introductionmentioning

confidence: 99%

Comparison of characteristics between inverted and normal structure heterojunction bipolar transistors

Akagi

Yoshida

Kurata

1988

Electron Comm Jpn Pt II

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The collector‐top heterojunction transistor (C‐top HBT) with inverted structure is expected to operate at a much higher speed than the emitter‐top heterojunction transistor (E‐top HBT) because the former has a smaller base‐collector junction area. In this paper, the merits of the C‐top HBT compared to the E‐top HBT in circuit applications were investigated by the simulation of ring oscillation characteristics, including dependence on fan‐out and interconnect line length, and the divide‐by‐four circuit characteristics. The influences of the emitter, base and collector resistances and the external base capacitance of the HBT's on the switching characteristics, and the divide‐by‐four circuit performance were also investigated. The degree of improvement was evaluated, using results of simulation over HBT's with the reduced base resistance and the external base capacitance.

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Heterojunction Bipolar Transistors

Ishibashi¹

1993

Compound and Josephson High-Speed Devices

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Collector-top GaAs/AlGaAs heterojunction bipolar transistors for high-speed digital ICs

Cited by 22 publications

References 0 publications

A collector-up heterojunction bipolar transistor using a p-type doping buried layer

A collector-up heterojunction bipolar transistor using a p-type doping buried layer

Comparison of characteristics between inverted and normal structure heterojunction bipolar transistors

Heterojunction Bipolar Transistors

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