Collisionless electrostatic single-probe and double-probe measurements

Peterson, Ernest W.; Talbot, L.

doi:10.2514/3.6089

Cited by 82 publications

(42 citation statements)

References 14 publications

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“…Therefore the probe measurements have not been analyzed by applying linear extrapolation of the saturation currents to plasma potential, but by the procedure proposed by Peterson and Talbot. 32,33 This yields somewhat lower electron densities than reported in previous studies for similar plasma conditions. 8 The procedure gives the electron and ion saturation current at plasma potential, the electron temperature, the plasma potential, and the ratio of probe radius and Debye length.…”

Section: B Langmuir Probe Measurementscontrasting

confidence: 45%

“…The currents drawn with the double probe and in the time-dependent measurements showed good agreement. The double probe measurements were again analyzed by an appropriate procedure proposed by Peterson and Talbot, 32 yielding the electron temperature, the ion saturation current at plasma potential, the voltage difference between floating and plasma potential, and the ratio of probe radius and Debye length. Comparison of single and double probe measurements in Ar and Ar-H 2 plasmas revealed an agreement in electron density within 15%.…”

Section: B Langmuir Probe Measurementsmentioning

confidence: 99%

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Formation of cationic silicon clusters in a remote silane plasma and their contribution to hydrogenated amorphous silicon film growth

Kessels

Leewis

Sanden

et al. 1999

Journal of Applied Physics

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. The formation of cationic silicon clusters Si n H m ϩ by means of ion-molecule reactions in a remote Ar-H 2 -SiH 4 plasma is studied by a combination of ion mass spectrometry and Langmuir probe measurements. The plasma, used for high growth rate deposition of hydrogenated amorphous silicon ͑a-Si:H͒, is based on SiH 4 dissociation in a downstream region by a thermal plasma source created Ar-H 2 plasma. The electron temperature, ion fluence, and most abundant ion emanating from this plasma source are studied as a function of H 2 admixture in the source. The electron temperature obtained is in the range of 0.1-0.3 eV and is too low for electron induced ionization. The formation of silicon containing ions is therefore determined by charge transfer reactions between ions emanating from the plasma source and SiH 4 . While the ion fluence from the source decreases by about a factor of 40 when a considerable flow of H 2 is admixed in the source, the flux of cationic silicon clusters towards the substrate depends only slightly on this H 2 flow. This implies a strong dissociative recombination of silicon containing ions with electrons in the downstream region for low H 2 flows and it causes the distribution of the cationic silicon clusters with respect to the silicon atoms present in the clusters to be rather independent of H 2 admixture. The average cluster size increases, however, strongly with the SiH 4 flow for constant plasma source properties. Moreover, it leads to a decrease of the...

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Section: B Langmuir Probe Measurementscontrasting

confidence: 45%

Section: B Langmuir Probe Measurementsmentioning

confidence: 99%

Formation of cationic silicon clusters in a remote silane plasma and their contribution to hydrogenated amorphous silicon film growth

Kessels

Leewis

Sanden

et al. 1999

Journal of Applied Physics

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show abstract

“…17 The signal was filtered by a LC electrical network to remove unwanted RF components. For the ion energy and ion flux measurements, an Impedans Semion retarding field energy analyzer (RFEA) was employed, placed on the substrate stage.…”

Section: B Substrate-tuned Biasing and Rf Biasingmentioning

confidence: 99%

Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth

Profijt

Sanden

Kessels

2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Two substrate-biasing techniques, i.e., substrate-tuned biasing and RF biasing, have been implemented in a remote plasma configuration, enabling control of the ion energy during plasma-assisted atomic layer deposition (ALD). With both techniques, substrate bias voltages up to −200 V have been reached, which allowed for ion energies up to 272 eV. Besides the bias voltage, the ion energy and the ion flux, also the electron temperature, the electron density, and the optical emission of the plasma have been measured. The effects of substrate biasing during plasma-assisted ALD have been investigated for Al2O3, Co3O4, and TiO2 thin films. The growth per cycle, the mass density, and the crystallinity have been investigated, and it was found that these process and material properties can be tailored using substrate biasing. Additionally, the residual stress in substrates coated with Al2O3 films varied with the substrate bias voltage. The results reported in this article demonstrate that substrate biasing is a promising technique to tailor the material properties of thin films synthesized by plasma-assisted ALD.

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“…Moreover, unless the probe area is sufficient small, it may draw large electronic current by disturbing the discharge conditions when operated close to the space potential which shows that the single probe method is not suitable for decaying plasmas accompanied by the perturbation of the discharge plasmas. In order to overcome these difficulties introduced by the SLP method, the double and triple Langmuir probe methods are settled, which have negligible influence on the discharges and yield an accurate data for the measurement of plasma parameters in all types of discharge plasmas (Peterson and Talbot, 1970).…”

Section: Introductionmentioning

confidence: 99%

Interpretation of Double Langmuir Probe I-V Characteristics at Different Ionospheric Plasma Temperatures

Bhattarai

2017

American Journal of Engineering and Applied Sciences

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Abstract:Where the plasma potential is fluctuating significantly, Single Langmuir probe method is not relevant to determine the plasma characteristics. This weakness was overcome by the development of the floating double probe. A distortion of the probe characteristics due to varying potential is eliminated, while the whole probe system is floating. This supports probe operation also in discharges with strongly varying potential. Double Langmuir probes provide valuable information on the behavior of space plasmas including ionospheres and the interstellar medium. This research paper focuses on the study of Spherical Double Langmuir Probe I-V characteristics in Maxwellian interstellar plasma. To generate the exact plasma conditions of the experimental testing environments computational procedures is adopted. The investigations address the development of a technique to model Maxwellian plasma. Three different ionospheric plasma temperatures are theoretically taken and its effects on floating potential are studied in this research. The variation of floating potential and ion saturation current due to temperature is clearly depicted. A noticeable trail in the I-V curves is the bump that occurs right after the floating potential. This feature in the transition region affects ability to determine the electron temperature, ion saturation current and plasma potential. Symmetric characteristic when both tips are of equal geometry is an important advantage of the double probe. Generally, all surfaces adjacent to the plasma become contaminated with deposits, so also does any probe. Here I have also deliver some sense of how one might proceed to use these results in the analysis of experimental I-V curves acquired in space.

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Collisionless electrostatic single-probe and double-probe measurements

Cited by 82 publications

References 14 publications

Formation of cationic silicon clusters in a remote silane plasma and their contribution to hydrogenated amorphous silicon film growth

Formation of cationic silicon clusters in a remote silane plasma and their contribution to hydrogenated amorphous silicon film growth

Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth

Interpretation of Double Langmuir Probe I-V Characteristics at Different Ionospheric Plasma Temperatures

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