“…Along with quantum wells (QWs) and quantum dots (QDs), semiconductor NPLs are the next generation of semiconductor nanostructures with the maximum possible miniaturization of the sample in the growth direction. One of the most intensively and successfully studied objects in this area are semiconductor NPLs of II-VI compounds with wurtzite or zinc blende structure (CdS, CdSe, CdTe [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 ], HgSe, HgTe [ 21 , 22 ]) and, partly, compounds IV–VI (PbS, PbSe, PbTe [ 4 , 12 , 23 , 24 , 25 ], as well as NPLs based on In, Sn, Cu [ 4 ]). The dimensions of these systems on the plane of the plate can reach from the tens, hundreds or even thousands of angstroms, while in the transverse direction, the thickness of the NPLs can reach only a few atomic layers and is controlled up to a monolayer precision and almost ideal thickness uniformity [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 …”