Colloidal Quantum Dot Solid-Based Infrared Optoelectronics Enabled by Solution-Phase Ligand Exchange

Si, Min-Jae; Kim, Dongeon; Jeong, Seoryeon; Yang, Minjung; Kim, Jeongeun; Lee, Seo-Young; Lee, In-Suh; Jeong, Jaewoo; Kim, Byeong-Chan; Han, Taeho; Kim, Beomkwan; Ahn, Yongnam; Jee, Seungin; Jung, Yujin; Baek, Se-Woong

doi:10.1007/s11814-024-00268-1

Korean J. Chem. Eng.

2024

DOI: 10.1007/s11814-024-00268-1

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Colloidal Quantum Dot Solid-Based Infrared Optoelectronics Enabled by Solution-Phase Ligand Exchange

Min-Jae Si,

Dongeon Kim,

Seoryeon Jeong

et al.

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Giant Colloidal Quantum Dot/α-Ga₂O₃ Heterojunction for High Performance UV–Vis–IR Broadband Photodetector

Lee,

Jeong,

Moon

et al. 2024

ACS Nano

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Broadband optoelectronics, which extend from the UV to IR regions, are crucial for imaging, autonomous driving, and object recognition. In particular, photon detection efficiency relies significantly on semiconductor properties, such as absorption coefficients and electron−hole pair generation rate, which can be optimized by designing a suitable p−n junction. In this study, we devise giant PbS colloidal quantum dots (G-PbS CQDs) that exhibit high absorption coefficients and broadband absorption. To leverage these exceptional optical properties, we combine G-PbS CQDs with an ultrawide-bandgap semiconductor, α-Ga 2 O 3 , and create an efficient G-PbS CQD/α-Ga 2 O 3 heterojunction photodetector that exhibits high performance across the UVC−vis−NIR spectrum range. The resultant heterojunction facilitates efficient electron−hole pair separation at the G-PbS CQD/α-Ga 2 O 3 heterojunction. Furthermore, we utilize transparent graphene electrodes to overcome the limitations of conventional transistor-type device structures and the substantial optical losses induced by opaque metal electrodes. This strategy maximizes the light-collection area and results in an approximately 3-orders of magnitude higher responsivity (55.5 A/W) and specific detectivity (1.66 × 10 13 Jones) compared to devices with opaque metal electrodes.

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Giant Colloidal Quantum Dot/α-Ga₂O₃ Heterojunction for High Performance UV–Vis–IR Broadband Photodetector

Lee,

Jeong,

Moon

et al. 2024

ACS Nano

View full text Add to dashboard Cite

show abstract

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Colloidal Quantum Dot Solid-Based Infrared Optoelectronics Enabled by Solution-Phase Ligand Exchange

Cited by 1 publication

References 65 publications

Giant Colloidal Quantum Dot/α-Ga₂O₃ Heterojunction for High Performance UV–Vis–IR Broadband Photodetector

Giant Colloidal Quantum Dot/α-Ga₂O₃ Heterojunction for High Performance UV–Vis–IR Broadband Photodetector

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Colloidal Quantum Dot Solid-Based Infrared Optoelectronics Enabled by Solution-Phase Ligand Exchange

Cited by 1 publication

References 65 publications

Giant Colloidal Quantum Dot/α-Ga2O3 Heterojunction for High Performance UV–Vis–IR Broadband Photodetector

Giant Colloidal Quantum Dot/α-Ga2O3 Heterojunction for High Performance UV–Vis–IR Broadband Photodetector

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Product

Resources

About

Giant Colloidal Quantum Dot/α-Ga₂O₃ Heterojunction for High Performance UV–Vis–IR Broadband Photodetector

Giant Colloidal Quantum Dot/α-Ga₂O₃ Heterojunction for High Performance UV–Vis–IR Broadband Photodetector