Colloidal Synthesis of Cobalt Nanoparticles for Application in Non Volatile Memory Device

Scaling down of cobalt quantum‐dots by colloidal route for non‐volatile memory device application

“…The process can further be optimised, and is potentially useful for the practical realisation of NVM devices. [5] thermal oxidation 7.4 SiO 2 (5.5 nm)/SiO 2 (13 nm) 1.9 V/±4 V Si [2] ball milling and chemical etching 6 SiO 2 (2 nm)/SiO 2 (7 nm) 0.5 V/±5 V Co [6] r e flux heating method 5 SiO 2 (4 nm)/Al 2 O 3 (10 nm) 8 V/±6 V Ni [3,14] microwave assisted synthesis 4 SiO 2 (4 nm)/Al 2 O 3 (10 nm) 1.3 V/±5 V Co [11] e-beam evaporation and thermal annealing 2 SiO 2 (3 nm)/HfO 2 (…”

“…Co QDs are synthesised by following the literature procedure with minor modifications [12, 13]. Co 2 (CO) 8 is used as cobalt metal precursor, in o ‐dichlorobenzene as the solvent, as well as TOPO and oleic acid as capping and size control agents, respectively.…”

“…However, the precise placement of sufficiently small (<3 nm) Ge QDs is difficult due to a minimum size for heterogeneous nucleation [1]. As opposed to self-assemble semiconductor QDs, colloidal synthesised QDs can be valuable because colloidal synthesis processes provide a wide range of QDs size tunability with good size uniformity [6] at low manufacturing cost. Also, the colloidal synthesis process can be suitably modified in terms of solvents to obtain desired concentrations of nanoparticles, which have substantial influences on the fabricated device performance [7].…”