2018
DOI: 10.1109/tsm.2018.2841661
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Colloidal Synthesized Cobalt Nanoparticles for Nonvolatile Memory Device Application

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Cited by 11 publications
(5 citation statements)
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“…A maximum window of 7.12 V was observed for Ag NPs capped TiO 2 NW for ± 10 V sweep voltage which was higher than other high-k dielectric memory devices [16] and also better than…”
Section: Resultsmentioning
confidence: 69%
“…A maximum window of 7.12 V was observed for Ag NPs capped TiO 2 NW for ± 10 V sweep voltage which was higher than other high-k dielectric memory devices [16] and also better than…”
Section: Resultsmentioning
confidence: 69%
“…Mondal et. al., also reported that Ag decorated TiO 2 TF enhanced the capacitive memory as compare to bare TiO 2 TF [14] . Similarly, enhanced memory window using metal NPs decorated high-k dielectric based capacitive memory was also reported [15] [16] but all of the above memory needs a significant improvement.…”
mentioning
confidence: 71%
“…Moreover, using TOPO alone resulted in an Ostwald ripening process. The resulting CoNPs were used to make CoNPs-based NVM device with strong charge storage characteristics [64].…”
Section: Pure Cobalt Nanoparticlesmentioning
confidence: 99%