“…They include the II-VI semiconductor CQDs, CdX (Mattoussi et al, 2000;Qu et al, 2001;Xie et al, 2005;Gaponik et al, 2002), HgTe (Rogach et al, 1999), ZnX (X ¼ S and O) (Chen et al, 2004;Wong and Searson, 1999;Radovanovic et al, 2002); the IV-VI semiconductor CQDs, PbX (Yang et al, 2013;Wehrenberg et al, 2002;Hines and Scholes, 2003;Murphy et al, 2006) (X ¼ S, Se, and Te); the III-V semiconductor CQDs, InP (Micic et al, 1994), and InAs (Schaller et al, 2007); the IV semiconductor CQDs, Si (Biteen et al, 2006;Mangolini and Kortshagen, 2007;Beard et al, 2007), and Ge (Heath et al, 1994). In the past two decades a number of semiconductor CQDs have been successfully synthesized, characterized, and applied.…”