2004
DOI: 10.1002/chin.200502013
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Colloidal ZnSe, ZnSe/ZnS, and ZnSe/ZnSeS Quantum Dots Synthesized from ZnO.

Abstract: Luminescence D 6540 Colloidal ZnSe, ZnSe/ZnS, and ZnSe/ZnSeS Quantum Dots Synthesized from ZnO. -Colloidal ZnSe quantum dots are synthesized from ZnO powder in a lauric acid/hexadecylamine mixture. The quantum dots show controlled photoluminescence emission from 400 to 440 nm with quantum yields from 6 to 10% at room temperature. By coating ZnSe with ZnS the photoluminescence quantum yield of ZnSe/ZnS quantum dots increases ca. 4.5-fold, whereas ZnSeS coated ZnSe/ZnSeS quantum dots exhibit ca. 3.8-fold increas… Show more

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Cited by 4 publications
(4 citation statements)
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“…The PL-QYs of ZnSe Qdots can be increased by coating with a wider band-gap semiconductor, such as ZnS which has an ~5% lattice mismatch with ZnSe [ 170 ]. After passivation with 1.8 monolayers of ZnS shell, the QYs of ZnSe/ZnS core/shell Qdots increased 450% to a value of ~32%.…”
Section: Propertiesmentioning
confidence: 99%
“…The PL-QYs of ZnSe Qdots can be increased by coating with a wider band-gap semiconductor, such as ZnS which has an ~5% lattice mismatch with ZnSe [ 170 ]. After passivation with 1.8 monolayers of ZnS shell, the QYs of ZnSe/ZnS core/shell Qdots increased 450% to a value of ~32%.…”
Section: Propertiesmentioning
confidence: 99%
“…Most of the commercialized white LED, which combines a blue LED with yttrium aluminitum garnet (YAG), suffers from a halo effect of blue/yellow color separation and poor color rendering index (CRI) caused by a lack of red component in the spectrum. Semiconductive colloidal quantum dots (QDs) that exhibit quantum confinement effect have drawn significant attention over the past decade [4]- [6]. II-VI semiconductive QDs, such as colloidal CdSe QDs, have been examined mostly because of their high emission efficiency and size-tuned photoluminescence (PL).…”
Section: Introductionmentioning
confidence: 99%
“…They include the II-VI semiconductor CQDs, CdX (Mattoussi et al, 2000;Qu et al, 2001;Xie et al, 2005;Gaponik et al, 2002), HgTe (Rogach et al, 1999), ZnX (X ¼ S and O) (Chen et al, 2004;Wong and Searson, 1999;Radovanovic et al, 2002); the IV-VI semiconductor CQDs, PbX (Yang et al, 2013;Wehrenberg et al, 2002;Hines and Scholes, 2003;Murphy et al, 2006) (X ¼ S, Se, and Te); the III-V semiconductor CQDs, InP (Micic et al, 1994), and InAs (Schaller et al, 2007); the IV semiconductor CQDs, Si (Biteen et al, 2006;Mangolini and Kortshagen, 2007;Beard et al, 2007), and Ge (Heath et al, 1994). In the past two decades a number of semiconductor CQDs have been successfully synthesized, characterized, and applied.…”
Section: Introductionmentioning
confidence: 99%