Color centers based on heavy group-IV elements

Narrowband photoluminescence of Tin-Vacancy colour centres in Sn-doped chemical vapour deposition diamond microcrystals

“…Group-IV colour centres in diamond like Silicon-Vacancy (Si-V), Germanium-Vacancy (Ge-V) and Tin-Vacancy (Sn-V) possess narrowband photoluminescence (PL) emission at room temperature (RT) in the visible or near-IR spectral ranges and, thus, attract significant attention due to their possible applications in quantum information technologies [1][2][3][4][5][6], biomedicine (optical biomarkers and drug carriers) [7][8][9] and local optical thermometry [10][11][12][13]. Regarding quantum information applications, Sn-V is predicted to be the most suitable out of the listed Group-IV colour centres.…”

“…The larger atomic radii of Sn leads to higher splitting in ground state and therefore spin-level structure can be resolved at higher temperature (approx. 2 K) with spin coherence time in the millisecond range [1,14]. This is less expensive in comparison with Si-V and Ge-V centres, which require sub-Kelvin regimes of operation [15].…”

Low-Temperature Spectroscopic Investigation of Lead-Vacancy Centers in Diamond Fabricated by High-Pressure and High-Temperature Treatment

“…However, the NV center has a low concentration on the zero phonon line (ZPL) against the total fluorescence, at ~4%, and an unstable optical transition against external noise 13 . To overcome these issues, group IV element-based color centers in diamond, such as silicon-vacancy centers (SiV) [13][14][15] , germanium-vacancy centers (GeV) [16][17][18] , and tin-vacancy centers (SnV) [19][20][21][22] , have been attracting interest because they possess large ZPLs and high resistance to external noise due to their structural symmetry 23,24 . Nevertheless, their spin coherence times are limited by phononmediated transitions within the ground states [25][26][27][28] .…”

“…The rapid development of the quantum information field brings great demand for the transfer of quantum states among separated quantum nodes. , Color centers in diamond are expected to be suitable candidates for quantum nodes. − Nitrogen-vacancy (NV) centers in diamond have been intensively studied because of their excellent spin coherence time. − However, the NV center has a low concentration on the zero phonon line (ZPL) against the total fluorescence, at ∼4%, and an unstable optical transition against external noise . To overcome these issues, group IV element-based color centers in diamond, such as negatively charged silicon-vacancy (SiV) centers, − germanium-vacancy (GeV) centers, − and tin-vacancy (SnV) centers, − have been attracting interest because they possess large ZPLs and high resistance to external noise due to their structural symmetry. , Nevertheless, their spin coherence times are limited by phonon-mediated transitions within the ground states. − Sub-Kelvin cooling of an SiV center has been reported to achieve a long spin coherence time of over 10 ms . As another approach, a heavier group IV element of tin was used to fabricate SnV centers to suppress the phonon-mediated transition with a large ground state splitting .…”

“…13 To overcome these issues, group IV element-based color centers in diamond, such as negatively charged siliconvacancy (SiV) centers, 13−15 germanium-vacancy (GeV) centers, 16−18 and tin-vacancy (SnV) centers, 19−22 have been attracting interest because they possess large ZPLs and high resistance to external noise due to their structural symmetry. 23,24 Nevertheless, their spin coherence times are limited by phonon-mediated transitions within the ground states. 25−28 Sub-Kelvin cooling of an SiV center has been reported to achieve a long spin coherence time of over 10 ms. 29 As another approach, a heavier group IV element of tin was used to fabricate SnV centers to suppress the phonon-mediated transition with a large ground state splitting.…”