Color Tunable Organic Light‐Emitting Devices with External Quantum Efficiency over 20% Based on Strongly Luminescent Gold(III) Complexes having Long‐Lived Emissive Excited States

Cheng, Gang; Chan, Kaai Tung; To, Wai‐Pong; Ming, Chi

doi:10.1002/adma.201304263

Cited by 149 publications

(89 citation statements)

References 55 publications

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“…[(C 19 N 5 H 11 AuCl] and HÀCCÀC 9 H 5 O 2 were synthesized by using previously reported procedures. [9,31] [(C 19 N 5 H 11 AuCl] (220 mg, 0.21 mmol) and copper(I) iodide (8.0 mg, 0.04 mmol) were added to TEA (10 mL). Then asolution of HÀCCÀC 9 H 5 O 2 (132 mg, 0.80 mmol) in degassed dichloromethane (80 mL) was added to the mixture and stirred for 400 min under ambient conditions.…”

Section: Methodsmentioning

confidence: 99%

“…[7] In particular, room-temperature alkynylgold(III) complexes containing strong s-donating ligandsh ave successfully paved the way for the preparation of highly efficient organic light-emitting diodes( OLEDs);t hus provingt hem to be excellent candidates for optoelectronics. [8][9][10] However,d espite their relativelyh igh chemical stability, [11] relative nontoxicity, [2] environmental benignancy, [12] and favorable photoluminescence properties, [13] other electronics devices based on alkynylgold(III) materials have not been widely reported.…”

Section: Introductionmentioning

confidence: 99%

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Resistance Controllability in Alkynylgold(III) Complex‐Based Resistive Memory for Flash‐Type Storage Applications

Wang

Fang

Jiang

et al. 2017

Chemistry An Asian Journal

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Owing to the demands of state-of-the-art information technologies that are suitable for vast data storage, the necessity for organic memory device (OMD) materials is highlighted. However, OMDs based on metal complexes are limited to several types of transition-metal complex systems containing nitrogen-donor ligands. Herein, attempts are made to introduce novel alkynylgold(III) materials into memory devices with superior performance. In this respect, an alkynyl-containing coumarin gold(III) complex, [(C N H )Au-C≡C-C H O], has been synthesized and integrated into a sandwiched Al/[(C N H )Au-C≡C-C H O]/indium tin oxide device. By precisely controlling the compliance current (I ), the devices show different switching characteristics from flash-type binary resistance switching (I ≤10 A) to WORM-type (WORM=write once read many times) ternary resistance switching (I =10 A). This work explores electrical gold(III) complex based memories for potential use in organic electronics.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Resistance Controllability in Alkynylgold(III) Complex‐Based Resistive Memory for Flash‐Type Storage Applications

Wang

Fang

Jiang

et al. 2017

Chemistry An Asian Journal

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“…[57][58][59] Representative members of this class of cationic complexes, [(N^N^C)AuX] (36)(37)(38)(39), are shown in Scheme 9. [57][58][59] Representative members of this class of cationic complexes, [(N^N^C)AuX] (36)(37)(38)(39), are shown in Scheme 9.…”

Section: [(C^n^n)au III ]C Omplexesmentioning

confidence: 99%

Cyclometalated Gold(III) Complexes: Synthesis, Reactivity, and Physicochemical Properties

2017

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This Review showcases the ability of bi- and tridentate ligands to stabilize gold in high oxidation states through the formation of mono- and biscyclometalated gold(III) complexes. In-depth studies on the synthesis, intrinsic reactivity, catalytic relevance, and photophysical properties of stabilized gold(III) species have been carried out, setting the stage for exciting developments in various research areas, such as catalysis, inorganic and bioinorganic chemistry, ligand design, and materials science.

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“…In recent years, research areas and novel applications focusing on organic light emitting devices (OLEDs) have developed rapidly [1,2,3,4]. However, there are still many problems that are inhibiting large scale industrialization of OLEDs.…”

Section: Introductionmentioning

confidence: 99%

Method for Aluminum Oxide Thin Films Prepared through Low Temperature Atomic Layer Deposition for Encapsulating Organic Electroluminescent Devices

Liu

Duan

et al. 2015

Materials

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Preparation of dense alumina (Al2O3) thin film through atomic layer deposition (ALD) provides a pathway to achieve the encapsulation of organic light emitting devices (OLED). Unlike traditional ALD which is usually executed at higher reaction n temperatures that may affect the performance of OLED, this application discusses the development on preparation of ALD thin film at a low temperature. One concern of ALD is the suppressing effect of ambient temperature on uniformity of thin film. To mitigate this issue, the pumping time in each reaction cycle was increased during the preparation process, which removed reaction byproducts and inhibited the formation of vacancies. As a result, the obtained thin film had both high uniformity and density properties, which provided an excellent encapsulation performance. The results from microstructure morphology analysis, water vapor transmission rate, and lifetime test showed that the difference in uniformity between thin films prepared at low temperatures, with increased pumping time, and high temperatures was small and there was no obvious influence of increased pumping time on light emitting performance. Meanwhile, the permeability for water vapor of the thin film prepared at a low temperature was found to reach as low as 1.5 × 10 −4 g/(m 2 · day) under ambient conditions of 25 °C and 60% relative humidity, indicating a potential extension in the lifetime for the OLED.

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Color Tunable Organic Light‐Emitting Devices with External Quantum Efficiency over 20% Based on Strongly Luminescent Gold(III) Complexes having Long‐Lived Emissive Excited States

Cited by 149 publications

References 55 publications

Resistance Controllability in Alkynylgold(III) Complex‐Based Resistive Memory for Flash‐Type Storage Applications

Resistance Controllability in Alkynylgold(III) Complex‐Based Resistive Memory for Flash‐Type Storage Applications

Cyclometalated Gold(III) Complexes: Synthesis, Reactivity, and Physicochemical Properties

Method for Aluminum Oxide Thin Films Prepared through Low Temperature Atomic Layer Deposition for Encapsulating Organic Electroluminescent Devices

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