Colour detection using a buried double
            <i>p</i>
            -
            <i>n</i>
            junction structure implemented in the CMOS process

Lu, Guo‐Neng; Chouikha, Mohamed Ben; Sou, Gérard; Sedjil, Mohamed

doi:10.1049/el:19960337

Cited by 58 publications

(31 citation statements)

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“…The shallow junction response is positioned in the range [450nm to 500nm] and the deep junction response is positioned in the range [700nm to 750nm] for the chosen depths. We compared our results with the previous study in [1][2][3][4][5] and it turned out to be close with slight differences in the photocurrents values due to some 4 parameters that differs from previous study such as doping profile, incident light intensity and due to the chosen computational method.…”

Section: Bdj Modelsupporting

confidence: 59%

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Modelling a buried double junction photodetector using COMSOL

Rellam

Aissat

Bougerira

et al. 2015

Optik

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Section: Bdj Modelsupporting

confidence: 59%

“…To our knowledge, at the present time, the previous studies considered one-dimensional models [1][2][3][4]. Thus, we have developed a two dimensional BDJ model to take into consideration other effects such as lateral currents and edge effects [4].…”

Section: Introductionmentioning

confidence: 99%

Modelling a buried double junction photodetector using COMSOL

Rellam

Aissat

Bougerira

et al. 2015

Optik

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“…The logarithm of the two junctions' photocurrents ratio (which is independent of the light intensity) was again employed for color estimation, and since the sensor was fully CMOS compatible, it was therefore integrated together with signal processing circuits in a simple microsystem [95]. A more detailed presentation of the theoretical aspects of such a CMOS-compatible, two-junction, color sensing structure, called by the authors a "Buried Double Junction" (BDJ), was presented in a much more recent paper.…”

Section: Color Sensor Structures With Two Vertically Stacked Photo-dementioning

confidence: 99%

Color Sensors and Their Applications

Puiu

2012

Springer Series on Chemical Sensors and Biosensors

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This chapter intends to provide an introduction to and a very brief summary of the principal categories of color sensors and of their applications, both relatively little known to the general public.First, an introduction describes the background of the topic(s) and the overall context. The main differences between two major but complementary techniques, colorimetry and spectrometry, will be presented here, as well as a quick summary of the scientific, technical, and industrial applications of color sensing. The second section will summarize the basic operational principles and architectures of color sensors realized in silicon. Although stand-alone detectors will also be described and discussed, the main focus will be on solid-state microsensors which can ideally be monolithically integrated together with signal processing circuits onto the same chip as "smart sensors" or intelligent microsystems. First, sensors realized only in monocrystalline silicon are summarized, followed then by those fabricated in other materials, with amorphous silicon and its alloys as the key players in this latter category.Finally, the chapter ends with the sections devoted to Conclusions and References. This chapter presents only a few of the most relevant aspects related to color sensors and examples of their practical applications. It is, in fact, an extensively abbreviated version of a much more detailed and exhaustive review dedicated to both color sensing and microspectrometry, and which is presently in preparation for future submission to Springer Verlag.

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“…They reported that in a standard CMOS process n-well/p-substrate structure provides relatively better quantum efficiency for biosensors operating in visible electromagnetic spectrum. Using the properties that external quantum efficiency varies as a function of wavelength of the incident light and Beer's law, many research groups reported the use of buried double pn junction (BDJ) and buried triple p-n junction structures, which can be implemented with a standard CMOS process, for monochromatic color detection [75,76]. The BDJ structure has two standard p-n junctions (p-base/n-well/p-substrate) are stacked vertically in the CMOS chip.…”

Section: Tune Device Responsivitymentioning

confidence: 99%