Combination of Gate-Stack Process and Cationic Composition Control for Boosting the Performance of Thin-Film Transistors Using In–Ga–Zn–O Active Channels Prepared by Atomic Layer Deposition

Moon, Sung-Won; Bae, Soohyun; Kwon, Young H.; Seong, Nak-Jin; Yang, Jong‐Heon; Kim, Min Su; Choi, Kyu-Jeong; Hwang, Chi‐Sun; Yoon, Sung‐Min

doi:10.1021/acsaelm.1c00689

Cited by 19 publications

(4 citation statements)

References 44 publications

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“…Using table 1, we determined that studies of indium-based oxide semiconductors have greatly increased since 2021. Not only binary In 2 O 3 [42][43][44][45][46][47][48][49], but also a ternary as IGO [59][60][61][62], IZO [62,63], In-Al-O (IAO) [64,65] and ITO [66], quaternary as IGZO [4,30,[71][72][73][74][75][76][77][78][79][80], ITAO [81,82], and ITGO [83] have been introduced. Also, compared to other materials in table, the precursors for indium oxide are variously used.…”

Section: Chemical Reaction and Film Propertiesmentioning

confidence: 99%

Atomic layer deposition for nanoscale oxide semiconductor thin film transistors: review and outlook

Kim

Kim²,

Kim³

et al. 2023

Int. J. Extrem. Manuf.

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Since the report of amorphous In-Ga-Zn-O (a-IGZO) based thin film transistors (TFTs), interest in oxide semiconductors has increased due to their high mobility, low off-current, low process temperature, and wide flexibility of compositions and processes. However, oxide semiconductors deposited by conventional processes like physical vapor deposition (PVD) leads a problematic issue to produce high-resolution displays and highly integrated memory devices due to the limited process flexibility and the poor conformality on the structured surface. Thus, a need to replace conventional deposition processes has emerged. Atomic layer deposition (ALD) is an advanced technique which could provide conformal, thickness-controlled, and high-quality thin film deposition. From these backgrounds, recently, studies on ALD based oxide semiconductors have dramatically increased. Even so, the relations of film properties of ALD-oxide semiconductors with the main variables associated with deposition and issues related to applications are still less understood than conventional one. In this review, we introduce ALD-oxide semiconductors by providing: (Ⅰ) a brief history and importance of ALD-based oxide semiconductors in the industry, (Ⅱ) a discussion of the value of ALD in oxide semiconductors (in-situ composition control in vertical distribution /vertical structure engineering / chemical reaction and film properties / insulator and interface engineering), and (Ⅲ) an explanation of the challenging issues of scaling oxide semiconductors and ALD in industrial applications. This review provides a valuable perspective for researchers who have interest in semiconductor material and electronic devices by suggesting the reasons why ALD is important in the application of oxide semiconductors.

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Section: Chemical Reaction and Film Propertiesmentioning

confidence: 99%

Atomic layer deposition for nanoscale oxide semiconductor thin film transistors: review and outlook

Kim

Kim²,

Kim³

et al. 2023

Int. J. Extrem. Manuf.

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show abstract

“…In the top-gate structure, wet chemical processes involved in this photolithography can affect the characteristics of the TFT, because the IGZO top surface becomes the channel interface of the TFT later [ 14 ]. Several papers have reported TFT methodologies that perform photolithographic patterning after continuous deposition of gate dielectrics as a protective layer (PL) on IGZO to avoid the top surface being exposed to these chemicals [ 15 , 16 , 17 ]. The consecutive deposition of the gate dielectric PL on IGZO can prevent chemical damage on the channel surface, but since additional gate dielectrics must be deposited again after forming an active island pattern, the entire TFT fabrication process becomes complicated.…”

Section: Introductionmentioning

confidence: 99%

Influence of Channel Surface with Ozone Annealing and UV Treatment on the Electrical Characteristics of Top-Gate InGaZnO Thin-Film Transistors

Oh,

Kim,

et al. 2023

Materials

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The effect of the channel interface of top-gate InGaZnO (IGZO) thin film transistors (TFTs) on the electrical properties caused by exposure to various wet chemicals such as deionized water, photoresist (PR), and strippers during the photolithography process was studied. Contrary to the good electrical characteristics of TFTs including a protective layer (PL) to avoid interface damage by wet chemical processes, TFTs without PL showed a conductive behavior with a negative threshold voltage shift, in which the ratio of Ga and Zn on the IGZO top surface reduced due to exposure to a stripper. In addition, the wet process in photolithography increased oxygen vacancy and oxygen impurity on the IGZO surface. The photo-patterning process increased donor-like defects in IGZO due to organic contamination on the IGZO surface by PR, making the TFT characteristics more conductive. The introduction of ozone (O3) annealing after photo-patterning and stripping of IGZO reduced the increased defect states on the surface of IGZO due to the wet process and effectively eliminated organic contamination by PR. In particular, by controlling surface oxygens on top of the IGZO surface excessively generated with O3 annealing using UV irradiation of 185 and 254 nm, IGZO TFTs with excellent current–voltage characteristics and reliability could be realized comparable to IGZO TFTs containing PL.

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“…The current research on a-IGZO TFT is mainly focused on the following aspects: adopting semiconductor layer doping process to improve device performance and stability [14], adopting new protective layer materials to improve device stability [15], developing new electrode materials [16], investigating the mechanism of device electrical stability [17], adjusting device structure and device applications [18][19]. Among them, for the simulation of a-IGZO TFT device performance, the traditional physics-based modeling method is mainly done by modeling the device and scanning the corresponding physical quantity parameters by TCAD simulation software, but the method is very time-consuming and tedious, and it is difficult to keep up with the development of a-IGZO TFT.…”

Section: Introductionmentioning

confidence: 99%

Study on Amorphous InGaZnO Thin-Film Transistor Modeling Method Based on Artificial Neural Network

Xie

Cai

Jian

et al. 2023

IEEE J. Electron Devices Soc.

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In this work, two approaches of forward design neural network and reverse design neural network were proposed to accelerate the design of passivation-layer structured amorphous indium gallium zinc oxide thin-film transistor (a-IGZO TFT). It was based on a neural network with the back-propagation neural network (BPNN) and general regression neural network (GRNN) as general approximators. The forward design neural network utilized the density-of-states (DOS) key parameters of a-IGZO film as input signals, and could quickly predict characteristic curves with high accuracy. The forward design effectively improved the problem of complex input/output layer parameters in the existing methods, which was significant for the prediction and optimization of a-IGZO TFT device performance. And the reverse design neural network adopts the DOS key parameters of a-IGZO film as the output signal to achieve the rapid prediction of DOS parameters of a-IGZO film. The inverse design effectively compensated the drawback that a-IGZO TFT required artificial tuning of DOS key parameters to achieve characteristic curve fitting. All in all, the neural network model can effectively determine whether the output parameters of the network meet the design objectives and whether the output parameters need to be changed by adjusting the input parameters to eventually achieve the performance prediction and material parameters optimization of a-IGZO TFT.

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Combination of Gate-Stack Process and Cationic Composition Control for Boosting the Performance of Thin-Film Transistors Using In–Ga–Zn–O Active Channels Prepared by Atomic Layer Deposition

Cited by 19 publications

References 44 publications

Atomic layer deposition for nanoscale oxide semiconductor thin film transistors: review and outlook

Atomic layer deposition for nanoscale oxide semiconductor thin film transistors: review and outlook

Influence of Channel Surface with Ozone Annealing and UV Treatment on the Electrical Characteristics of Top-Gate InGaZnO Thin-Film Transistors

Study on Amorphous InGaZnO Thin-Film Transistor Modeling Method Based on Artificial Neural Network

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