Combinatorial Deposition of Microcrystalline Silicon Films Using Multihollow Discharge Plasma Chemical Vapor Deposition

Koga, Kazunori; Matsunaga, Takeaki; Kim, Yeonwon; Nakahara, Kenta; Yamashita, Daisuke; Matsuzaki, Hiroyuki; Kamataki, Kunihiro; Itagaki, Naho; Shiratani, Masaharu

doi:10.7567/jjap.51.01ad02

Cited by 4 publications

(4 citation statements)

References 24 publications

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“…Si QDs were fabricated by multi-hollow discharge plasma chemical vapor deposition (CVD). 8,[24][25][26][27][28] Detailed process was already described in our previous works. [8][9][10][11]24,29) In this work, Si QDs were synthesized under 5 Torr of working pressure and their particle size was approximately 9 nm diameters.…”

Section: Methodsmentioning

confidence: 99%

Performance dependence of Si quantum dot-sensitized solar cells on counter electrode

Seo¹,

Ichida²,

Itagaki³

et al. 2014

Jpn. J. Appl. Phys.

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Au counter electrode is generally used with polysulfide electrolyte for quantum dot-sensitized solar cells (QDSCs) due to degradation of QD by iodine electrolyte and strong interaction between Pt counter electrode and S2− ions in polysulfide electrolyte. In this work, the effects of the thickness and morphology of Au counter electrode on the performance of Si QDSC were investigated. Au film thickness was linearly controlled from 5 to 500 nm by deposition time. Cyclic voltammetry and impedance analysis clarified the catalytic activity of counter electrode, surface resistance of transparent conductive oxide (TCO), and the charge transportation at the counter electrode. The increase of Au film thickness reduced the surface resistance of TCO with increased conductivity. No significant difference in the redox reaction from electrolyte to Si QDs was observed for Au film thickness from 20 to 500 nm. Catalytic reaction of counter electrode was activated with the increase of Au film thickness up to 200 nm. The impedance of charge transportation at the counter electrode was also decreased with Au deposition. Their surface resistance, catalytic activity and internal resistance were reflected in overall performance. Consequently, Si QDSC with 200-nm-thick Au counter electrode had the best performance.

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Section: Methodsmentioning

confidence: 99%

Performance dependence of Si quantum dot-sensitized solar cells on counter electrode

Seo¹,

Ichida²,

Itagaki³

et al. 2014

Jpn. J. Appl. Phys.

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“…The hollow cathode and multihollow cathode are highdensity plasma sources, and various configurations have been proposed. [17][18][19][20] Because of the high-density plasma generated by the multihollow cathode of MCXS, both high hydrogen passivation efficiency and a high deposition rate of above 100 nm=min are possible. In addition, crystal defects on the silicon wafer surface are efficiently passivated by ammonia (NH 3 ) plasma pretreatment prior to deposition.…”

Section: Pe-cvdmentioning

confidence: 99%

Plasma-enhanced chemical-vapor deposition of silicon nitride film for high resistance to potential-induced degradation

Mishina

Ogishi

Ueno

et al. 2015

Jpn. J. Appl. Phys.

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The antireflection coating (ARC) on crystalline silicon solar cells plays an important role in preventing potential-induced degradation (PID). In a previous work, we reported that the module, which has an ARC prepared by plasma-enhanced chemical-vapor deposition (PE-CVD) using a hollow cathode, indicated high resistance to PID with a constant conventional refractive index (RI). In this work, we report further investigation of the high-PID-resistant ARC. The results indicate that the high-PID resistant ARC had high conductivity, high Si-H bond density, and low N-H bond density. Furthermore, both higher PID resistance and higher conversion efficiency are achieved using an ARC of double or triple layers comprising stacked silicon nitride layers of different RI than those of a conventional single-layer ARC.

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“…Cluster incorporation into films contributes to Si-H 2 bond formation in the films [11][12][13][14][15]. SiH 3 radicals are the main deposition precursors for high-quality a-Si:H films, while Si-H 2 bonds are also formed by surface reactions of SiH 3 radicals [16][17][18]. Therefore, suppressing cluster incorporation as well as tuning the surface reactions of SiH 3 radicals is required to form highly stable a-Si:H films.…”

Section: Introductionmentioning

confidence: 99%

Identification and Suppression of Si-H<sub>2 </sub>Bond Formation at P/I Interface in a-Si:H Films Deposited by SiH<sub>4 </sub>Plasma CVD

Tanaka

Hara

Nagaishi

et al. 2019

Plasma and Fusion Research

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Light-induced degradation is an important problem concerning hydrogenated amorphous silicon (a-Si:H) solar cells. A-Si:H films of lower Si-H 2 bond density exhibit less light-induced degradation. In this study, Raman spectroscopy measurements of a-Si:H films with P-layer/I-layer structure reveal that high-density Si-H 2 bonds exist in the I-layer within 60 nm of the P/I interface. These Si-H 2 bonds originate from surface reactions of SiH 3 radicals, as the alternative origin (i.e., cluster incorporation) is considerably suppressed by a multi-hollow discharge plasma chemical vapor deposition method. For an I-layer thickness of 20 nm, the density ratio of Si-H 2 and Si-H bonds in the I-layer decreases from 0.133 to 0.053 as the substrate temperature increases from 170 • C to 250 • C. Fine tuning of the substrate temperature during the initial stage of I-layer deposition is thus effective in suppressing Si-H 2 bond formation at the P/I interface.

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Combinatorial Deposition of Microcrystalline Silicon Films Using Multihollow Discharge Plasma Chemical Vapor Deposition

Cited by 4 publications

References 24 publications

Performance dependence of Si quantum dot-sensitized solar cells on counter electrode

Performance dependence of Si quantum dot-sensitized solar cells on counter electrode

Plasma-enhanced chemical-vapor deposition of silicon nitride film for high resistance to potential-induced degradation

Identification and Suppression of Si-H<sub>2 </sub>Bond Formation at P/I Interface in a-Si:H Films Deposited by SiH<sub>4 </sub>Plasma CVD

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