Combinatorial Deposition of Microcrystalline Silicon Films Using Multihollow Discharge Plasma Chemical Vapor Deposition

Abstract

Absback.We performed a least-squares fit for crystal potentials derived by APW band structure calculations for monatomic, as well as diatomic, structures. The potential is described by an eighth order polynomial multiplied by an exponential function. The fitted potentials yield eigenvalues, for a variety ofk points, within 2-3 mRyd of the first-principles APW results We have also discovered that starting with the fitted potential at a given lattice constant and using the potential in the interstitial region (muffin-tin zero) as a single

Time of Flight Size Control of Carbon Nanoparticles Using Ar+CH4 Multi-Hollow Discharge Plasma Chemical Vapor Deposition Method

“…Traditional plasma process has the discharge off period to wait for pumping out the particles from the gas phase, resulting in lower throughput. To date, we have successfully synthesized Si NPs and CNPs by using multi-hollow discharge plasma chemical vapor deposition (MHDPCVD), which can be produced continuously by employing fast gas flow [15][16][17][18][19][20][21][22][23]. In this method, the gas flow direction is uniform in the plasma region, and NPs are nucleated and grown in plasma.…”

“…NPs synthesis by the MHDPCVD method undergoes parametric tests such as dependence on gas pressure, gas flow rate, and gas composition, which are the external parameters [15][16][17][18][19][20][21][22][23][24]. Using the MHDPCVD, crystalline Si nanoparticles of 2 nm in size with 0.5 nm in size dispersion were produced for nanocrystalline amorphous silicon films for the third generation solar cells [15][16][17][18][19][20][21]. We employed two MHDPCVD sources to produce size-controlled Si nanoparticles and to cover nitrogen on the particles.…”

Investigation on antireflection coating for high resistance to potential-induced degradation

“…The hollow cathode and multihollow cathode are one of the high-density plasma sources, and various configurations have been proposed. [13][14][15][16] Owing to the high-density plasma generated by the newly developed multihollow cathode of MCXS, it provides both high hydrogen passivation efficiency and a deposition rate higher than 100 nm/min. In addition, crystal defects on the silicon wafer surface are efficiently passivated owing to ammonia (NH 3 ) plasma treatment prior to deposition.…”

Study on the Fabrication of Paint-Type Si Quantum Dot-Sensitized Solar Cells

“…Si QDs were synthesized by multihollow discharge plasma CVD. [30][31][32][33][34] Schematic diagram of the fabrication process is shown in Fig. 1.…”