Combinatorial Fabrication Process for a-Si:H Thin Film Transistors

Abstract

Absmct.A previous shell-model-style calculation for the ground-state energy of the 'He nucleus, based on coupled cluster techniques, was able to treat exactly the centre-of-mass motion. It is now recast in a precisely equivalent but vastly more computationally efiaent form, directly in terms of coordinate-space correlation functions which are expanded in a Gaussian geminal basis and determined variationally. This reformulation further leads in a straightforward manner to a natural procedure for including higher-order correlations. Its implementation at even the simplest level produces a significant improvement in the already very good upper bounds achieved far the ground-state energy. Further extensions are also discussed.

Combinatorial Chemical Vapor Deposition. Achieving Compositional Spreads of Titanium, Tin, and Hafnium Oxides by Balancing Reactor Fluid Dynamics and Deposition Kinetics

“…7 The use of CVD to produce compositional spreads in multicomponent systems has been limited, and, to the best of our knowledge, none exist for multicomponent oxides. 8,9 This paper describes the design of a CVD reactor that can produce compositional variation. To achieve precursor compatibility, gas-phase reactions must be minimized while maintaining approximately similar growth rates.…”

Combinatorial Physical Vapor Deposition of π‐Conjugated Organic Thin Film Libraries

“…Combinatorial approach was demonstrated by us for the fabrication of a‐Si:H based devices. By using a combinatorial plasma‐enhanced chemical vapor deposition (PECVD) system, a‐Si:H TFT library was made and characterized as a function of a different thicknesses of a‐Si:H and a‐SiN:H layer thickness and of cyanide treatment condition 30…”

High‐Throughput Chemical Vapor Deposition System and Thin‐Film Silicon Library

“…The combinatorial approach or high-throughput experimentation for developing electronic thin films has received great attention in recent years, [6][7][8][9] despite an almost 25-years gap since the initial work by Hanak almost 30 years ago. [10] This approach has challenged not only processing but also characterization techniques Summary: Thin-film Si materials library were fabricated rapidly on glass substrates using the combinatorial hot-wire CVD technique.…”