Combined FEM and phase field method for reliability design of forward degradation in SiC bipolar device
Akira Kano,
Kenji Hirohata,
Mitsuaki Kato
et al.
Abstract:The reliability of 4H-SiC bipolar devices is compromised by the expansion of single Shockley stacking faults (SSFs) during forward-current operation. Because SSF expansion is governed by multiphysical aspects, including electrical, thermal, and stress states, analysis of the mounted structure is important for improving power module design. We propose a practical design method that analyzes the critical condition due to SSF expansion using a combined method with a multiphysical finite element method (FEM) and p… Show more
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