Combined IV and CV Analysis of Laser Annealed Carbon and Boron Implanted SiGe Epitaxial Layers

Abstract

SiGe epitaxial layers receiving sub-melt laser annealing after Carbon and Boron co-implantations are investigated. Their electrical properties have been evaluated in the reverse bias region of the IV and CV characteristics of SiGe/Si diode structures. Large dc leakage currents and frequency-dependent capacitance dispersions are observed. They are indicating the presence of electrically active defects in the studied devices. Combined IV and CV analysis suggests that the defectivity of the B-induced end-ofrange defects can be enhanced by the laser treatment. This laserdriven enhancement can be suppressed by the C co-implantations. Experimental results also indicate that this C treatment is strongly affected by the laser annealing conditions.

Growth and Processing Defects in CMOS Homo- and Hetero-Epitaxy

“…The latter is frequently employed to reduce the silicon interstitial-mediated transient enhanced diffusion of B, in order to better control the junction depth. A more in-depth study of the electrically active defects, combining highfrequency C-V and I-V junction characteristics leads to the conclusion that the laser annealing itself creates point defects in the junction depletion region (34). This is demonstrated by the result of Fig.…”

“…Split 1 did not receive and split 2 did receive a B implantation. The average values of 5 samples are plotted for the MSA case.For the case without laser anneal, two samples have been measured and their values are directly plotted on the graph (after Kobayashi et al[34]).…”