Abstract-Results of Monte Carlo simulation of mid-infrared QCL structure initially proposed by Page et al. [Appl. Phys. Lett. 78, 3529 (2001)] are presented. The band-bending effect imposed by nonequilibrium electric charge distribution during the laser operation is observed. Perturbations of electric potential, non-equilibrium charge and electron sub-bands populations are demonstrated for a realistic range of electron sheet densities levels.Electron transport in quantum cascade lasers (QCL) can be successfully described using the Boltzmann Transport Equation (BTE) theory. The transport takes place in the direction perpendicular to the semiconductor heterojunctions and then can be viewed as a chain of scattering events between discrete sub-bands. In such a picture, the electron states are obtained as solutions of the Schrödinger equation, and then the scattering rates can be obtained using the Born approximation and Fermi Golden Rule. For parallel to hetero-junctions direction, the electron states are modeled as plane waves. Several techniques can be used to calculate the electron sub-band populations and distribution functions. The most popular methods used to solve BTE in QCL structures are: the Monte Carlo (MC) [1][2][3][4][5] and the Rate Equation (RE) [4][5][6][7][8]. Whereas the first one is more general and does not require any additional approximations, the second one assumes that the electron distribution function has the shape of the Fermi-Dirac distribution. In both methods electron interactions with the crystal lattice imperfections as impurities or vibrations -phonons are commonly included. Also the Coulomb electron interactions play an important role and some research demonstrates that they are needed to obtain population inversion between lasing sub-bands [9]. However, the presence of other electrons in the structure influences the behavior of an electron also in other ways. The first already mentioned is the shortrange, the Coulomb type electron-electron interaction [1,2]. The other type is a more indirect influence of electron gas by screening interactions [2, 10-11], depending on electron density and distribution in the structure. The other one, which we would like to discuss in this paper, is the band-bending effect caused by non-uniform distribution of electrons and ionized impurities along the structure. Such distribution of an electric charge generates additional electrostatic potential which modifies the potential shape determined by the semiconductor material configuration. This leads to position modification of energy sub-bands, corresponding wave-functions and then to modification of electron scattering rates between them. This effect can be included in modeling by solving selfconsistently coupled Schrödinger-Poisson equations, where in the Poisson equation the actual electrical charge distribution is used. Our calculations were performed using combined MC and RE algorithm [5] when the RE method is self-consistently coupled to the Schrödinger/ Poisson equation and after reaching the co...