Combined x-ray photoelectron spectroscopy/ultraviolet photoelectron spectroscopy/field emission spectroscopy for characterization of electron-emission mechanism of diamond

Yamaguchi, Hisato; Kudo, Yoshihisa; Masuzawa, Tomoaki; Kudo, M.; Yamada, Takatoshi; Takakuwa, Yuji; Okano, Ken

doi:10.1116/1.2837872

Cited by 6 publications

(5 citation statements)

References 17 publications

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“…The series resistance of the measurement system calculated from the I-V curves is in the range of 0.9-4.2 × 10 9 ⍀ for all measurement conditions. Similar I-V characteristics are observed for lightly N-doped diamond with bulk resistance of ϳ10 9 ⍀ [17].…”

Section: Resultssupporting

confidence: 83%

High sensitivity photodetector made of amorphous selenium and diamond cold cathode

et al. 2014

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In the present study, high-sensitivity photodetection has been demonstrated using an amorphous selenium (a-Se) based photodetector driven by nitrogen-doped diamond cold cathode. The emission current -applied voltage characteristics are compared between different lighting conditions, and their sensitivities are evaluated in terms of nominal quantum efficiency. The estimated nominal quantum efficiency was 10-40 for visible and up to 1000 for ultraviolet, proving a successful photodetection utilizing carrier multiplication in a-Se. PACS Nos.: 73.50.Pz, 73.61.Jc, 85.45.Db. Résumé : Nous démontrons ici la photo-détection de haute sensibilité, en utilisant un photo-détecteur basé sur du sélénium amorphe (a-Se), entrainé par une cathode froide de diamant dopé à l'azote. Nous comparons sous différentes conditions les caractéristiques du courant d'émission versus le voltage appliqué et les sensibilités sont évaluées en fonction de l'efficacité quantique nominale. L'estimé de l'efficacité quantique nominale est dans la fourchette 10-40 pour le visible et monte à 1 000 pour l'UV, prouvant le succès de la photo-détection utilisant la multiplication des porteurs dans a-Se. [Traduit par la Rédaction]

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Section: Resultssupporting

confidence: 83%

High sensitivity photodetector made of amorphous selenium and diamond cold cathode

et al. 2014

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“…The series resistance of the measurement system calculated from the I-V curves were in the range of 0.9–4.2 × 10 9 Ω for all measurement conditions. This current saturation was speculated as current limitation by bulk resistance of the diamond [ 42 – 44 ], which was often observed in the I-V characteristics of diamond cold cathodes with bulk resistance of over 10 9 Ω.…”

Section: Characterization Of A-se Based Photodetectorsmentioning

confidence: 99%

Development of an Amorphous Selenium-Based Photodetector Driven by a Diamond Cold Cathode

Masuzawa

Saito

Yamada

et al. 2013

Sensors

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Amorphous-selenium (a-Se) based photodetectors are promising candidates for imaging devices, due to their high spatial resolution and response speed, as well as extremely high sensitivity enhanced by an internal carrier multiplication. In addition, a-Se is reported to show sensitivity against wide variety of wavelengths, including visible, UV and X-ray, where a-Se based flat-panel X-ray detector was proposed. In order to develop an ultra high-sensitivity photodetector with a wide detectable wavelength range, a photodetector was fabricated using a-Se photoconductor and a nitrogen-doped diamond cold cathode. In the study, a prototype photodetector has been developed, and its response to visible and ultraviolet light are characterized.

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“…N 0 is calculated to be 1.4−2.0 × 10 20 photons per square meter per second, using the optical power output and directivity of the UV‐LED supplied in the product datasheet. It is also assumed that the field‐induced electron emission takes place in a local site on the cathode, the area of which is reported to be 1 µm 2 or even smaller 12. Only the fraction of photons that illuminate this area should contribute to the current increase.…”

Section: Resultsmentioning

confidence: 99%

High quantum efficiency UV detection using a‐Se based photodetector

Masuzawa

Onishi

Saito

et al. 2013

Physica Rapid Research Ltrs

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High‐sensitivity ultraviolet (UV) photodetection has been attempted by utilizing the carrier multiplication effect in amorphous selenium. The prototype photodetector presented in this Letter showed an extremely high sensitivity to UV light, so that up to 1000 carriers are generated per incident photon. This result should lead to the development of an ultrahigh‐sensitivity photodetector that can be used for spectrometric applications covering the visible to UV region. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Combined x-ray photoelectron spectroscopy/ultraviolet photoelectron spectroscopy/field emission spectroscopy for characterization of electron-emission mechanism of diamond

Cited by 6 publications

References 17 publications

High sensitivity photodetector made of amorphous selenium and diamond cold cathode

High sensitivity photodetector made of amorphous selenium and diamond cold cathode

Development of an Amorphous Selenium-Based Photodetector Driven by a Diamond Cold Cathode

High quantum efficiency UV detection using a‐Se based photodetector

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