Combining graphene with silicon carbide: synthesis and properties – a review

Abstract

Being a true two-dimensional crystal, graphene possesses a lot of exotic properties that would enable unique applications. Integration of graphene with inorganic semiconductors, e.g. SiC promotes the birth of a class of hybrid materials which are highly promising for development of novel operations, since they combine the best properties of two counterparts in the frame of one hybrid platform. As a specific heterostructure, graphene on SiC performs strongly dependent on the synthesis method and the growth modes.In this paper a comprehensive review of the most relevant studies of graphene growth methods and mechanisms on SiC substrates has been carried out. The aim is to elucidate the basic physical processes that are responsible for the formation of graphene on SiC.First, an introduction is made covering some intriguing and not so often discussed properties of graphene. Then, we focus on integration of graphene with SiC which is facilitated by the nature of SiC to assume graphitization. As concerning the synthesis methods we discuss thermal decomposition of SiC, chemical vapor deposition and molecular beam epitaxy stressing that the first technique is the most common one when SiC substrates are used. In addition, we briefly appraise graphene synthesis via metal mediated carbon segregation.We address in detail the main aspects of the substrate effect such as substrate face polarity, offcut, kind of polytype and nonpolar surfaces on the growth of graphene layers. A comparison of graphene grown on the polar faces is made. In particular, growth of graphene on Si-face SiC is critically analyzed concerning growth kinetics and growth mechanisms taking into account the specific characteristics of SiC (0001) surfaces, such as the step-terrace structure and the unavoidable surface reconstruction upon heating. In all subtopics obstacles and solutions are featured. We complete the review with a short summary and concluding remarks. Outline

Modulating the electronic and magnetic properties of graphene

“…Different experimental and theoretical strategies have been used to grow graphene epitaxially on SiC (4H and 6H-SiC substrates). For graphene growth, SiC is an important substrate 14,17,18 due to its facile integration into present industrial techniques used in the electronics industry. However, its high cost limits its use in large scale production of graphene.…”

Role of the Potential Barrier in the Electrical Performance of the Graphene/SiC Interface

“…Copyright (2015) with permission from Elsevier. From our previous work [70], we know that the quality of graphene (thickness, uniformity) and its physical properties are highly sensitive to the status of the SiC substrate, including the miscut angle, kind of polytype and face polarity. Therefore, the reliable control of the barrier height requires a clear understanding of the fundamental relation between the properties of the SiC substrate and the quality of the graphene layers.…”

Electrochemical Deposition of Copper on Epitaxial Graphene

“…Exploiting epitaxial graphene grown on SiC (epitaxial graphene (EG)/SiC) using the hightemperature sublimation technique is regarded as an alternative strategy for sensing platform development. Due to evident advantages over other graphene family materials (namely, its large surface area free of functional groups, high quality of monolayer graphene, thickness uniformity, wide potential window, high signal-to-noise ratio, transfer-free technology, and direct sublimation growth without precursors [75][76][77]), epitaxial graphene has been tested with promising results for the real-time detection of Pb 2+ ions in aqueous solutions (with a detection limit far below the WHO's permissible level for lead in drinking water) through performing square-wave anodic stripping voltammetry and response-recovery measurements [78,79]. Inspired by this, we have recently extended our activities beyond lead detection to include the investigation of the electrochemical behavior of the Hg 2+ /Hg 0 redox couple at the epitaxial graphene working electrode [80]; now, we are aiming to elucidate the nature of the copper electroreduction at the epitaxial graphene surface.…”