Combining high-resolution X-ray reciprocal space mapping and dark-field electron holography for strain analysis in 20 nm pMOS structures

Durand, Aurèle; Boureau, Victor; Le-Cunff, Delphine; Hourtane, Axel; Benoît, Daniel; Claverie, A.; Hÿtch, Martin; Rouchon, D.; Gergaud, P.

doi:10.1109/nano.2015.7388727

Cited by 4 publications

(1 citation statement)

References 6 publications

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“…This is a first indication of the high quality of signal obtained within one hour with the system. It should also be noted that these experimental RSMs were also found in very good agreement with simulation results obtained based on strain field characterization technique as explained in details in [7]. To investigate in a more quantitative way the difference between the RSM diagrams, the observed positions (in Qx and Q z ) of the SiGe satellite peaks are plotted from JVX7300 and APS synchrotron in figure 18.…”

Section: Comparaison With Synchrotron Diagrammsupporting

confidence: 80%

HRXRD for in-line monitoring of advanced FD-SOI technology: Use-cases: AM: Advanced metrology

Cunff

Duru

Durand

et al. 2016

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)

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This paper describes specific applications illustrating the use of High Resolution X-Ray Diffraction (HRXRD) for the inline control of advanced logic technology nodes. More specifically, an innovative strategy based on HRXRD rockingcurve analysis is described for the control of epitaxial SiGe layers on Fully Depleted Silicon On Insulator (FD-SOI) wafers including consideration of the strategy for managing the tilt between the SOI layer and the bulk silicon substrate. Furthermore, the quality of HRXRD Reciprocal Space Maps (RSMs) obtained in an industrial environment is demonstrated and the benefit of RSMs for inline control is discussed.

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Section: Comparaison With Synchrotron Diagrammsupporting

confidence: 80%

HRXRD for in-line monitoring of advanced FD-SOI technology: Use-cases: AM: Advanced metrology

Cunff

Duru

Durand

et al. 2016

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)

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The Challenge of Measuring Strain in FDSOI Device Structures – HRXRD as a Potential Method of Resolution

et al. 2017

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The strain state of Si1‐xGex/SiO2 dummy structures on FDSOI wafers is non‐destructively characterized by HRXRD reciprocal space mapping. A transition from biaxial to uniaxial strain is detected on narrow condensed Si1‐xGex lines with shallow trench isolation (STI), revealing an increasing in‐plane elastic strain relaxation perpendicular to the trenches with decreasing line width, but no strain relaxation parallel to the trenches. The degree of crystallinity of Si1‐xGex lines degrades with increasing annealing temperature and time. An additional elastic strain reduction appears in the direction parallel to the STI trenches after deposition of source‐drain Si1‐yGey islands between dummy gates. The separation of the Si1‐xGex peaks from Si1‐yGey remains unresolved if x and y are close to each other.

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In-line monitoring of strain distribution using high resolution X-ray Reciprocal space mapping into 20 nm SiGe pMOS

Durand

Kaufling

Le-Cunff

et al. 2017

Materials Science in Semiconductor Processing

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Combining high-resolution X-ray reciprocal space mapping and dark-field electron holography for strain analysis in 20 nm pMOS structures

Cited by 4 publications

References 6 publications

HRXRD for in-line monitoring of advanced FD-SOI technology: Use-cases: AM: Advanced metrology

HRXRD for in-line monitoring of advanced FD-SOI technology: Use-cases: AM: Advanced metrology

The Challenge of Measuring Strain in FDSOI Device Structures – HRXRD as a Potential Method of Resolution

In-line monitoring of strain distribution using high resolution X-ray Reciprocal space mapping into 20 nm SiGe pMOS

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