Atomic layer deposition (ALD) of Pt using MeCpPtMe 3 and the O 2 /O 3 /O 2 -plasma (O 2 *) at 300 °C is investigated with in vacuo X-ray photoelectron spectroscopy (XPS) and density functional theory (DFT) to gain a better understanding of the Pt growth mechanism. Most notably, the chemical state of the surface Pt atoms and the role of surface O species in Pt growth are revealed. In the MeCpPtMe 3 /O 2 process, the surface Pt atoms remain in a metallic Pt 0 state throughout the ALD cycle, and the surface O species generated by the O 2 exposure only exist as unstable adatoms, desorbing in vacuum. As for the O 3 /O 2 * processes, the surface Pt layer is oxidized to a mixture of Pt 0 , Pt 2+ O and Pt 4+ O 2 upon O 3 /O 2 * exposure and then fully reduced to Pt 0 during the precursor exposure. Surface Pt oxides are stable in a vacuum but can be reduced by hydrocarbon vapors. Quantification analysis shows that the O 3 /O 2 * processes have a much higher surface O species content than the O 2 process after the coreactant exposure, favoring precursor ligand combustion over dehydrogenation in the next precursor exposure and leading to lower surface C density after the precursor pulse. DFT reveals differences in the combustion mechanism for Me vs Cp species, during the metal precursor and coreactant pulses. Importantly, the differences in the surface O content do not significantly affect the growth per cycle. Moreover, the MeCpPtMe 3 /O 2 process with surface O species and a tailored MeCpPtMe 3 /O 2 process without surface O species, both at 300 °C, yield nearly identical growth rates and as-deposited Pt with the same chemical state. This indicates that surface O species present before the precursor exposure have little impact on the overall Pt growth, in contrast to a previous assumption.