Combustion Synthesis of Eu,Si-doped AlN Phosphor

Abstract

This study investigated the combustion synthesis of an Eu,Si-doped AlN blue phosphor for white light emitting diodes (LEDs) using Al, AlN, Eu 2 O 3 and Si 3 N 4 powders as raw materials. The photoluminescence (PL) property, crystal structure, and location of Eu of the synthesized phosphor were studied. When Eu is doped without Si doping, Eu does not locate into the AlN crystal but exists at the grain boundary as an oxide. When Eu and Si are co-doped, the Si-Eu-O rich layer generates in the AlN crystal, which exhibits the blue emission under ultraviolet irradiation. Eu is doped as divalent cations in the crystal and the large distance between Eu and surrounding ligands might reduce the crystal field splitting, resulting in the blue emission.