Commensurate and incommensurate phase transitions of the (001) InAs surface under changes of bulk lattice constant, As chemical potential, and temperature

Moison, J. M.; Guille, C.; Bensoussan, M.

doi:10.1103/physrevlett.58.2555

Cited by 40 publications

(9 citation statements)

References 19 publications

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“…The occurrence of the commensurateincommensurate transition as a function of temperature or (and) As over pressure, observed by Moison, Guille, and Bensoussan [6] in a strained InAs layer grown on…”

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confidence: 86%

“…Since the effects are essentially damaging, a number of growth strategies have been operated to minimize the associated composition gradings [5]. Specific reconstructions, never observed in binary strain free materials, such as the commensurate 2 X 3 and incommensurate 2 X n, appear on pseudomorphic layers of In Ga~As, strained on GaAs(001) substrates for a range of nominal x values including unity [6,7]. Although a correlation was inferred between the indium surface concentration and the reconstruction, a full interpretation in terms of atomic distribution in the surface unit cell was not yet available.…”

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confidence: 99%

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Commensurate and Incommensurate Phases at Reconstructed (In,Ga)As(001) Surfaces: X-Ray Diffraction Evidence for a Composition Lock-in

et al. 1995

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Surface chemical ordering of group III elements in the ternary alloy In Ga~, . As, stabilizing the 2 X 3 reconstruction at the surface composition In 067Ga() 33As, is demonstrated on the basis of x-ray diffraction data. An incommensurate 2 & n reconstruction is observed for lower In surface concentrations, achieved by burying an InAs monolayer under a number of GaAs layers and letting the In surface segregation process operate. A quantitative account of the intensity measured in the incommensurate phase is obtained by using a probabilistic distribution of Gaand In-rich structural elements. PACS numbers: 68.35.Bs, 61.10.Lx, 68.55.Bd Ternary and quaternary III-V semiconductor alloys are key materials in advanced technology for optoelectronics and microwave devices. The ultimate performances

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confidence: 86%

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confidence: 99%

Commensurate and Incommensurate Phases at Reconstructed (In,Ga)As(001) Surfaces: X-Ray Diffraction Evidence for a Composition Lock-in

et al. 1995

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“…Departures from this ideal arrangement, resulting in the incommensurate 2ϫn reconstructions, first studied in Ref. 8, have been assigned to the presence of indium depleted faults, in a previous structural assessment by x-ray diffraction. 6 On the basis of this model, a correlation was proposed between the parameter n and the surface indium concentration with the assumption of a homogeneous distribution of indium.…”

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confidence: 98%

Stoichiometry and discommensuration onInxGa1−xAs<

et al. 1998

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A quantitative estimate of the In/Ga surface concentration ratio in ultrathin ͑In, Ga͒As strained layers, grown by molecular-beam epitaxy on a GaAs͑001͒ substrate, is obtained using grazing incidence x-ray diffraction and diffuse-scattering measurements. The commensurate 2ϫ3 reconstruction is interpreted as due to cation ordering in the surface unit cell, locking the surface composition at the value In 2/3 Ga 1/3 As. Incommensurate 2ϫn reconstructions with nϽ3 (nϾ3) are described in terms of indium-depleted ͑-enriched͒ surface layers characterized by a statistical distribution of faults in the ideal 2ϫ3 atomic arrangement. Within a defined temperature range 450-490°C, a unique correspondence between the incommensurability parameter n and the indium surface fraction is established on the basis of a formulation of the diffuse scattering distribution.

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“…The structures of polar ͑001͒ surfaces of binary and multiple-element semiconductor materials ͓e.g., InAs, 1 CdTe, 2 and GaAs ͑Ref. 3͔͒ are of considerable interest because of fundamental aspects and because of their technological relevance for optoelectronic devices.…”

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Domain wall formation at thec(2×2)−(2×1)phase transition of the CdTe(001) surface

Neureiter

Tatarenko²,

Spranger

et al. 2000

Phys. Rev. B

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A specific type of line defect was detected at the temperature-driven c(2ϫ2)-(2ϫ1) phase transition of the CdTe͑001͒ surface, the formation of parallel domain walls in the (2ϫ1) phase, using high-resolution lowenergy electron diffraction. The domain walls arise because of spontaneous ordering of Cd surface vacancies in the Cd-terminated top layer and yield an effective relaxation of surface strain. Their general relevance for structural and thermodynamic properties of ͑001͒ semiconductor surfaces is discussed.

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Commensurate and incommensurate phase transitions of the (001) InAs surface under changes of bulk lattice constant, As chemical potential, and temperature

Cited by 40 publications

References 19 publications

Commensurate and Incommensurate Phases at Reconstructed (In,Ga)As(001) Surfaces: X-Ray Diffraction Evidence for a Composition Lock-in

Commensurate and Incommensurate Phases at Reconstructed (In,Ga)As(001) Surfaces: X-Ray Diffraction Evidence for a Composition Lock-in

Stoichiometry and discommensuration onInxGa1−xAs<

Domain wall formation at thec(2×2)−(2×1)phase transition of the CdTe(001) surface

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