Comment on a recent theory of tunneling without the transfer-Hamiltonian formalism

Caroli, C.; Combescot, R.; Lederer-Rozenblatt, D.; Nozières, P.; Saint‐James, D.

doi:10.1103/physrevb.12.3977

Cited by 12 publications

(6 citation statements)

References 9 publications

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“…Equation (3) demonstrates that the rate of the change of the electron number in the front layer, defined as the tunneling current, contains not only the conventional contribution j f z dA, but also the overlap between the wavefunctions for different layers. The orthogonality and completeness of the states on each side of the junction were discussed [13,14,15]. Then Eq.…”

Section: Definition Of Coherent Tunneling Spin Currentmentioning

confidence: 99%

“…Equation (3) demonstrates that the rate of change of the electron number in the front layer, defined as the tunnelling current, contains not only the conventional contribution j fz dA, but also the overlap between the wavefunctions for different layers. The orthogonality and completeness of the states on each side of the junction were discussed [13][14][15]. Then equation (3) manifests, from another point of view, why the tunnelling current is conventionally evaluated by the rate of change of the electron number on one side of a junction.…”

Section: Definition Of Coherent Tunnelling Spin Currentmentioning

confidence: 99%

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Tunnelling spin current and spin diode behaviour in a bilayer system

Jin

Li²

2009

J. Phys.: Condens. Matter

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The coherent tunnelling spin current in the bilayer system with spin-orbit coupling is investigated. Based on the continuity-like equations, we discuss the definition of the tunnelling current and show that the overlaps between wavefunctions for different layers contribute to the tunnelling current. We study the linear response of the tunnelling spin current to an in-plane electric field in the presence of nonmagnetic impurities. The tunnelling spin conductivity we obtained presents a feature asymmetrical with respect to the gate voltage when the strengths of impurity potentials are different in each layer.

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Section: Definition Of Coherent Tunneling Spin Currentmentioning

confidence: 99%

Section: Definition Of Coherent Tunnelling Spin Currentmentioning

confidence: 99%

Tunnelling spin current and spin diode behaviour in a bilayer system

Jin

Li²

2009

J. Phys.: Condens. Matter

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“…In a more compact form, ENEKGY (2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21) where ilV&= V E (+ 00)-Ve(-00) and In this form the WF is seen to consist of two components. a surface part bYE.…”

Section: (N)]t/i =Et/i (2-12)mentioning

confidence: 99%

“…A comprehensive review and digest of the tunneling literature up through 1969 has been given by C. B. Duke [15]. Recent deVelopment in the theories of tunneling are covered in two papers of debate between T. E. Feuchtwang and C. Caroli et al [21] and references contained therein.…”

Section: Some Basic Concepts Of Metal-vacuummetal Tunneling Theorymentioning

confidence: 99%

“…While quite thorough treatments of electron tunneling in conventional metal-insulator-metal junctions are available in the literature [14][15][16][17][18][19][20][21][22][23], no numerical results have previously been published which fully accounted for the image potential variation with electrode spacing and applied bias voltage, both of which are essential for comparison with the metal-vacuum-metal tunneling data. Additional motivations for performing the calculations were that 1) almost all of the available theoretical results have been seriously questioned in terms of numerical accuracy and overall validity of the analytical approximations which were employed [24], and 2) even if one were to accept the validity of results which have been obtained, the effort to extrapolate and apply these approximate result$ to the gold-vacuum-gold tunneling device would be almost as great as carrying out the more accurate numerical calculations.…”

Section: Some Basic Concepts Of Metal-vacuummetal Tunneling Theorymentioning

confidence: 99%

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Room Temperature Gold-Vacuum-Gold Tunneling Experiments

Teague¹

1986

J. RES. NAT. BUR. STAN.

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Preface Number 4An experiment has been completed which demonstrated quantum mechanical tunneling of electrons between two gold electrodes separated in vacuum. The tunneling current between the gold electrodes has been measured, for fixed voltages of 0.1 and 0.01 volts, as the electrode spacing was varied from a distance of approximately 2.0 nm down to a point where the electrodes touched. Current changes of over five orders of magnitude were found for electrode spacing changes of approximately 1.2 nm. For the first time, these data enable one to deduce the work function of the electrodes in a tunneling experiment from experimental parameters independent of the tunneling device. Also obtained were current-voltage characteristics for fixed electrode spacings in the direct tunneling region where electrode spacings were less than 2.0 nm. An analysis is given which attempts to deduce an absolute electrode spacing and tunneling area from the nonlinear properties of the I-V data and the curJuly-August 1986 rent versus spacing data. The analysis suggests that van der Waals and electrostatic forces playa major role in determining the I-V characteristics and that the tunneling area may be as small as 10-16 m 2 • Along with a review of the theory of work functions and quantum mechanical tunneling, numerical calculations of the tunneling current based on the free-electron model of the electrodes and the barrier, an image-potential reduced barrier, and a WKB approximation for the tunneling probability have been performed and compared with Simmons' theory and with the experimental results.Key words: metal-vacuum-metal tunneling; point-contact diode; scanning tunneling microscopy; temperature control; tunneling theory; vacuum tunneling; vibration isolation; work function Accepted: April 24, 1986 The following paper is a reproduction of the author's dissertation which was completed and submitted to North Texas State University in August 1978. A majority of the experimental work was performed at the National Bureau of Standards. Results from the experiments were first reported at the Spring 1978 APS meeting and later at a National Science Foundation Workshop on Opportunities for Microstructures Science, Engineering, and Technology held in Airlie, VA, November 19-22, 1978. While a complete description of the experiments and results is available as a publication from University Microfilms, pUblication in the more accessible form represented here has been prompted by requests from colleagues and by the significant number of recent references to the work. In accordance with the requests, the Board of Editors of the Journal of Research has agreed to publish the document unchanged except for the adAbout the Author: E. Clayton Teague is with the Center for Manufacturing Engineering in the NBS National Engineering Laboratory. dition of footnotes to identify recent work to which it is closely related. Renewed interest in these experiments has primarily resulted from the success and current widespread use of the scanning tunneling mic...

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Superconductivity

Mahan

1990

Many-Particle Physics

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Comment on a recent theory of tunneling without the transfer-Hamiltonian formalism

Cited by 12 publications

References 9 publications

Tunnelling spin current and spin diode behaviour in a bilayer system

Tunnelling spin current and spin diode behaviour in a bilayer system

Room Temperature Gold-Vacuum-Gold Tunneling Experiments

Superconductivity

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