Comment on “Dynamics of thermal growth of silicon oxide films on Si”

Roura, P.; Farjas, Jordi

doi:10.1103/physrevb.74.127301

Cited by 5 publications

(2 citation statements)

References 17 publications

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“…However, the results related to the molecular oxygen as an oxidizing agent showed that the D-G model was not applicable to the thin oxidation regime whose oxidation thickness is less than 20 nm [12][13][14][15] . The drawbacks of the model, such as the initial thickness, the steadystate regime, and the reaction at a sharp oxide/Si interface, were circumvented by the assumption due to de Almeida et al [13] , stating that the reaction between silicon and the diffusing molecular oxygen would take place within the volume of a diffuse interface with finite thickness.…”

Section: Introductionmentioning

confidence: 89%

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A reaction-diffusion model for atomic oxygen interacting with spacecraft surface protective materials in low earth orbit environment

Chen

Wang

Lee

2009

Sci. China Ser. E-Technol. Sci.

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When hyperthermal atomic oxygen collides with a silicon surface, an ultrathin oxidation regime characterized by fractional atomic-oxygen anions having low diffusive and reactive barriers, along with their enhanced diffusion due to both the electric field and image potential, will form on the surface. In accordance with these properties, an attempt was made in the present study to modify the AlmeidaGoncalves-Baumvol (AGB) model by setting the diffusivity and reaction rate constant to be diffusion-length dependence. According to the modified model, numerical parametric studies for oxidation thin growth were performed. The dependencies of the diffusion coefficient, the reaction rate constant, the attenuation length, and the adjustable parameter upon the translational kinetic energy, flux, temperature, and tangential flux of atomic oxygen were analyzed briefly via the fitting of the experimental data given by Tagawa et al. The numerical results confirmed the rationality of the modified diffusion-reaction model. The model together with the computer code developed in this study would be a useful tool for thickness evaluation of the protective film against the oxidation of atomic oxygen toward spacecraft surface materials in LEO environment.hyperthermal atomic oxygen,

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Section: Introductionmentioning

confidence: 89%

“…(11)- (14), for given p 0th ( p 0th <0.1), u 0 , and ξ, is numerically solved to produce a theoretical curve of oxide growth via eq. (15).…”

Section: Fitting the Ground Simulation Experimental Datamentioning

confidence: 99%

A reaction-diffusion model for atomic oxygen interacting with spacecraft surface protective materials in low earth orbit environment

Chen

Wang

Lee

2009

Sci. China Ser. E-Technol. Sci.

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Modelling of silicon oxynitridation by nitrous oxide using the reaction rate approach

Krzeminski

2013

Journal of Applied Physics

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Large technological progress in oxynitridation processing leads to the introduction of silicon oxynitride as ultra-thin gate oxide. On the theoretical side, few studies have been dedicated to the process modelling of oxynitridation. Such an objective is a considerable challenge regarding the various atomistic mechanisms occurring during this fabrication step. In this article, some progress performed to adapt the reaction rate approach for the modelling of oxynitride growth by a nitrous ambient are reported. The Ellis and Buhrman's approach is used for the gas phase decomposition modelling. Taking into account the mass balance of the species at the interface between the oxynitride and silicon, a minimal kinetic model describing the oxide growth has been calibrated and implemented. The influence of nitrogen on the reaction rate has been introduced in an empirical way. The oxidation kinetics predicted with this minimal model compares well with several experiments

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Reply to “Comment on ‘Dynamics of thermal growth of silicon oxide films on Si’ ”

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Comment on “Dynamics of thermal growth of silicon oxide films on Si”

Cited by 5 publications

References 17 publications

A reaction-diffusion model for atomic oxygen interacting with spacecraft surface protective materials in low earth orbit environment

A reaction-diffusion model for atomic oxygen interacting with spacecraft surface protective materials in low earth orbit environment

Modelling of silicon oxynitridation by nitrous oxide using the reaction rate approach

Reply to “Comment on ‘Dynamics of thermal growth of silicon oxide films on Si’ ”

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