“…Since the bandgap in LBTN-x (3.269-3.525 eV) is larger than the excitation energy of the laser (2hv = 3.1 eV), 2PA can not be attributed to a direct transition process. However, 2PA can occur at 800 nm in LBTN-x thin films from strong laser pulse with intermediate levels in the forbidden gap induced by impurities [19].…”