Comment on the book review of "Analysis and design of electronic circuits"

Chirlian, Paul M.; Waldhauer, F.D.

doi:10.1109/proc.1966.4707

Cited by 2 publications

(2 citation statements)

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“…However, due to the input capacitances of the differential op-amp A 1 , three equivalent capacitances C 1 , C 2 and C 4 are present between both inputs to A 1 and earth, as can be seen in figure 6. Among them, the equivalent capacitance C 2 is used to represent C 2 from Miller's theorem [12]. It is necessary to complement Z 1 and Z 2 with C 1 and C 3 in order to attain a higher VCCS output impedance.…”

Section: The Voltage-controlled Current Sourcementioning

confidence: 99%

Electrical resistance tomography for process applications

Dickin¹,

Wang²

1996

Meas. Sci. Technol.

345

201

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Measurement of electrical resistivity via four probes is widely used in a variety of applications ranging from geophysical prospecting to silicon wafer manufacture. Electrical resistivity tomography is an extension of this approach and is performed via an array of equi-spaced electrodes mounted into the periphery of a process vessel to map non-intrusively the spatial distribution of resistivities within. The digitized boundary data are `inverted' by an image reconstruction algorithm to produce a map of the internal resistivity distribution. This paper focuses on the design and operation of flexible electrical resistivity tomography instrumentation for use on laboratory- and plant-scale process equipment.

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Section: The Voltage-controlled Current Sourcementioning

confidence: 99%

Electrical resistance tomography for process applications

Dickin¹,

Wang²

1996

Meas. Sci. Technol.

345

201

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“…The main feature of this device is that a small current in the base is able to control a large current in the collector or emitter. This notable amplification can also be viewed as a device having a low input impedance and a high output impedance . A parallel device which can be made even smaller than the bipolar transistor is the field effect transistor (FET).…”

Section: The Present Devicesmentioning

confidence: 99%

Molecular Scale Electronics: A Synthetic/Computational Approach to Digital Computing

1998

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This paper outlines a design paradigm for molecular scale electronic systems. The contrast between the present bulk devices and potential molecular systems is presented along with the limitations of using bulk design philosophies for molecular-sized components. For example, the overwhelming considerations of heat dissipation on molecular scale electronic architectures are shown which demonstrate the need for dramatically different information transfer methods if these ultradense molecular devices are to be used for computation. The use of changes in electrostatic potential for information coding is suggested. The issue of signal restoration is addressed using a periodic external potential through the underlying substrate. Several convergent synthetic routes are shown to conjugated molecules with various potential digital device applications including a twoterminal molecular wire with a tunnel barrier, a molecular wire with a quantum well to serve as a resonanttunneling diode, three-terminal systems with switch-like possibilities, and four-terminal systems that could serve as logical gates without the use of multiple transistors. Ab initio computational methods are used to show that (i) molecules can be considered active electronic devices able to transfer the information from one molecule to another, (ii) the electrostatic potential can also be used as a tool to perform logical operations, and (iii) the molecules synthesized here could perform the functions for which they were designed.

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Comment on the book review of "Analysis and design of electronic circuits"

Cited by 2 publications

References 0 publications

Electrical resistance tomography for process applications

Electrical resistance tomography for process applications

Molecular Scale Electronics: A Synthetic/Computational Approach to Digital Computing

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