2003
DOI: 10.1177/0193945903252420
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Commentary by Hautman

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Cited by 2 publications
(8 citation statements)
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“…We used the 3D Ewald method on the basis of U d in Eq. (11) [68][69][70][71][72] . To realize crystal, we slowly cooled the system from a liquid above the melting temperature (∼ /k B ) at density N/V = 0.84σ −3 1 .…”
Section: Simulation Methodsmentioning
confidence: 99%
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“…We used the 3D Ewald method on the basis of U d in Eq. (11) [68][69][70][71][72] . To realize crystal, we slowly cooled the system from a liquid above the melting temperature (∼ /k B ) at density N/V = 0.84σ −3 1 .…”
Section: Simulation Methodsmentioning
confidence: 99%
“…We depict the impurities whose distance to some dipole in the PNR is shorter than 1.4. We find the numbers of the c=0.2, µ 0 =0.8 constituent dipoles and impurities as (a) (120, 70) and (b) (70,50) using the definition of PNRs in Sec.IVD. Here, the dipoles tend to be parallel to the impurity surfaces, as discussed in Sec.IVA, and almost all the impurities are on the PNR boundaries, resulting in plate-like PNRs.…”
Section: E Single Polar Nanoregion and Local Electric Fieldmentioning
confidence: 99%
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“…Generally, the electric potential can change noticeably across a microscopic Stern layer at a solid-water interface 1-3, 40 . We mention molecular dynamics simulations on this effect [41][42][43][44][45] . In our case, there are two such layers at the bottom and top.…”
Section: B Electric Potential and Stern Layersmentioning
confidence: 99%