2017 IEEE International Workshop on Integrated Power Packaging (IWIPP) 2017
DOI: 10.1109/iwipp.2017.7936759
|View full text |Cite
|
Sign up to set email alerts
|

Commereializing medium voltage VFD that utilizes high voltage SiC technology

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

0
2
0

Year Published

2019
2019
2025
2025

Publication Types

Select...
4
3

Relationship

0
7

Authors

Journals

citations
Cited by 8 publications
(2 citation statements)
references
References 5 publications
0
2
0
Order By: Relevance
“…To overcome these limitations, SiC MOSFET technology has emerged as a superior alternative to Si-IGBT technology. SiC MOSFETs offer advantages such as higher efficiency [7][8][9], increased switching frequency, extended operating temperature capabilities [10,11], and improved power density [12]. These properties make SiC MOSFETs a preferred choice for high-speed electric motor drive systems, surpassing the limitations of Si-IGBT technology.…”
Section: Introductionmentioning
confidence: 99%
“…To overcome these limitations, SiC MOSFET technology has emerged as a superior alternative to Si-IGBT technology. SiC MOSFETs offer advantages such as higher efficiency [7][8][9], increased switching frequency, extended operating temperature capabilities [10,11], and improved power density [12]. These properties make SiC MOSFETs a preferred choice for high-speed electric motor drive systems, surpassing the limitations of Si-IGBT technology.…”
Section: Introductionmentioning
confidence: 99%
“…However, robotic systems with direct-drive schemes, such as variable-frequency drive (VFD), actually have high-order non-linear systems [19,20]. The difficulty of acquiring analytic solutions for high-order systems has become an interesting issue.…”
Section: Introductionmentioning
confidence: 99%