Communication—Anomalous Shift of the Capacitance-Voltage Characteristics Obtained for p-MOS Capacitors with a Tin-Doped Indium Oxide Gate

Abstract

Properties of low-threshold silicon p-MOS capacitors with tin-doped indium oxide (ITO) gates have been investigated. A shift of the capacitance-voltage (C-V) characteristics after annealing the capacitors in an oxygen atmosphere was observed. An anomalous shift of the C-V characteristics is discussed based on the possible presence of negative charge at the ITO-silicon dioxide interface that comes from the diffusion of indium atoms into the silicon dioxide at annealing temperatures above 400 • C.