Communication—Corrosion Behavior of Tungsten Metal Gate in the Presence of Hydrogen Peroxide at Acidic Medium

Abstract

Herein, the corrosion behaviors of W metal gates in the presence of H 2 O 2 at the acidic medium were investigated as a function of dipping time, temperature, and H 2 O 2 concentration. We determined the kinetic constants (i.e. k w and k h ) based on the experimental data. The activation energy (E a ) are calculated from the Arrhenius equation. Thermodynamic parameters ( G ‡ , H ‡ , and S ‡ ) for the dissolution were determined based on the Eyring plot. These results investigated in this study will provide researchers the prior information on parameters to control the corrosion behaviors of W metal gates during the chemical mechanical planarization (CMP) process.

Synergetic Effect of Chemical Components in a Tungsten CMP Slurry and the Evolution of Tungsten Surface Species

“…In the absence of Fe 3+ ions, the slurry corrosion potential was lowest, indicating a limited oxidation capability. Meanwhile, the corrosion current was highest because W dissolved in H 2 O 2 , 19,20 which is consistent with the low COF during the W CMP process (Fig. 2b).…”

Stability Performance Analysis of Various Packaging Materials and Coating Strategies for Chronic Neural Implants under Accelerated, Reactive Aging Tests

“…This unique dissolution phenomenon is another major reason for choosing tungsten wires. The dissolution of tungsten in H 2 O 2 can be expressed by the following reaction Formulas (1)–(3) [ 44 ]: W(s) + 2H 2 O 2 → WO 2 (s) + 2H 2 O, 2WO 2 (s) + 6H 2 O 2 → H 2 W 2 O 11 (aq) + 5H 2 O, 3H 2 W 2 O 11 (aq) + 7H 2 O → 2H 2 W 3 O 12 (aq) + 8H 2 O 2 , …”

A review on chemical and mechanical phenomena at the wafer interface during chemical mechanical planarization

“…Also, in some cases, chemical reactions like the Fenton reaction are spontaneous exothermic processes, contribute to temperature increase during polishing. (ii) Case II: As is well known, with increasing temperature of the system, the rates of chemical reactions increase [118], leading to higher removal rates [116,119,120]. Kim et al reported that the slurries at higher temperatures lead to the formation of the soft layers on the surface of SiO 2 film, and this layer could be easily removed by mechanical abrasion [116,119].…”