Compact 20-W GaN Internally Matched Power Amplifier for 2.5 GHz to 6 GHz Jammer Systems

Abstract

In this paper, we demonstrate a compact 20-W GaN internally matched power amplifier for 2.5 to 6 GHz jammer systems which uses a high dielectric constant substrate, single-layer capacitors, and shunt/series resistors for low-Q matching and low-frequency stabilization. A GaN high-electron-mobility transistor (HEMT) CGH60030D bare die from Wolfspeed was used as an active device, and input/output matching circuits were implemented on two different substrates using a thin-film process, relative dielectric constants of which were 9.8 and 40, respectively. A series resistor of 2.1 Ω was chosen to minimize the high-frequency loss and obtain a flat gain response. For the output matching circuit, double λ/4 shorted stubs were used to supply the drain current and reduce the output impedance variation of the transistor between the low-frequency and high-frequency regions, which also made wideband matching feasible. Single-layer capacitors effectively helped reduce the size of the matching circuit. The fabricated GaN internally matched power amplifier showed a linear gain of about 10.2 dB, and had an output power of 43.3–43.9 dBm (21.4–24.5 W), a power-added efficiency of 33.4–49.7% and a power gain of 6.2–8.3 dB at the continuous-wave output power condition, from 2.5 to 6 GHz.

Robust Ku-Band GaN Low-Noise Amplifier MMIC

“…While GaAs pseudomorphic HEMTs (pHEMTs), characterized by low operating voltage, high electron mobility, and high maximum operating frequency, are actively used in transceiver modules, they require the application of additional limiters to block leaked power from the transmitter and to protect the receiver circuit from unwanted highinput power, which adversely affects both the size reduction of the module and the necessary low-noise performance. This drawback has contributed to a recent research trend focused on using GaN HEMTs on SiC in the receiver module [3][4][5][6][7][8].…”

Modeling of Key Specifications for RF Amplifiers Using the Extreme Learning Machine

“…A radio frequency (RF) amplifier is a key component of the RF front-end [ 1 , 2 ], which has been widely used in various radio systems [ 3 ], such as navigation systems [ 4 ], radar [ 5 , 6 ] and satellite communication systems [ 7 ], mobile communication systems [ 8 ], positioning systems [ 9 ], etc. Due to different application scenarios and requirements, the above radio systems usually need to work in various environments.…”

Support Vector Machine–Based Model for 2.5–5.2 GHz CMOS Power Amplifier

“…Power amplifiers (PAs) are the core components of wireless transceivers and have been the focus of research in wireless communications [ 1 , 2 ]. In addition, power amplifiers are a critical element of wireless transmitters and affect modern wireless communication systems and next-generation radars [ 3 , 4 ].…”