Compact and ultrafast holographic memory using a surface-emitting microlaser diode array

Paek, Eung Gi; Wullert, John R.; Jain, Monika; Lehmen, A. C. Von; Scherer, Axel; Harbison, J. P.; Florez, L. T.; Yoo, Hoi‐Jun; Martin, R. Douglas; Jewell, J. L.; Lee, Y. H.

doi:10.1364/ol.15.000341

Cited by 27 publications

(3 citation statements)

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“…Ultimately a laser diode array (SELDA) could be used to address the individual holograms directly. 17 Since the volume hologram must be read out nondestructively, a fixing process is required after the templates are recorded. Electrical fixing has been reported in the ferroelectric photorefractives barium titanate'8 and strontium barium niobate19 and thermal fixing in iron-doped lithium niobate.2° Although it is possible to induce a larger refractive index change in the ferroelectric materials by virtue of their large Pockels' coefficients and, hence, an increased diffraction efficiency of the reconstructed holograms, lithium niobate is available as relatively large (1 cm3) high-quality, defect-free crystals.…”

Section: Volume Hologram Template Memorymentioning

confidence: 99%

High-speed hybrid optical/digital correlator system

1993

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Section: Volume Hologram Template Memorymentioning

confidence: 99%

High-speed hybrid optical/digital correlator system

1993

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“…In our previous work on holographic memory readout using a SELDA [8], we have shown that the memory is capable of retrieving a 2-D information with about I O bits within one nanosecond with the total storage capacity of more than 1010 bits. However, the question is how to detect such an ultrafast information, 1014 bits/sec or 100 terabits /sec.…”

Section: A Holographic Associative Memory Using Tdmmentioning

confidence: 99%

<title>Microlaser-based compact optical neuro-processors (Invited Paper)</title>

et al. 1992

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This paper reviews the recent progress in the development of holographic neural networks using surfaceemitting laser diode arrays (SELDA's). Since the previous work on uRrafast holographic memory readout system and a robust incoherent correlator, several progress has been made : the use of an array of monolithic Nneurons to reconstruct holographic memories, two-dimensional (2-D) wavelength-division multiplexing (WDM) for image transmission through a single-mode fiber and finally an associative memory using time-division multiplexing (TDM). Experimental demonstrations on these are presented.

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“…VCSELs operating in the 650-700 nm range have a number of potential commercial uses such as laser projection displays [1], digital versatile disk systems (DVD) and ultra fast holographic memory systems [2]. Our specific interest is their use as the light source in short haul communication networks using inexpensive plastic fibres which have an attenuation minimum at 650 nm.…”

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confidence: 99%

Assessing the Performance of Visible (665 nm) Vertical Cavity Surface Emitting Lasers Using High Pressure and Low Temperature Techniques

Knowles

Sweeney

Sale

et al. 2001

phys. stat. sol. (b)

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The effects of carrier leakage and gain-cavity alignment on the temperature dependence of the threshold current (I th ) in visible vertical cavity surface emitting lasers (VCSELs) are investigated. In order to assess the two effects and the degree to which they couple we have performed pressure and temperature experiments on VCSELs and their equivalent edge emitting lasers (EEL). We have established that the peak of the gain moves with pressure at a rate of 72 meV GPa À1 more than three times the rate of 22 meV GPa --1 for the cavity mode. However, we show that over the temperature operating range carrier leakage into the indirect X-minima is the major contributor to an increased I th , nevertheless optimised gain-cavity alignment can lead to more stable operation.Introduction The use of hydrostatic pressure has been an extremely useful tool for investigating Edge-Emitting-Lasers (EELs) because it provides a method of continuously varying the band gap on a single device. Changing the band gap allows us to evaluate band gap dependent processes that may affect device performance. This functional role for pressure experiments is perhaps even more invaluable when investigating multi-layered structures such as Vertical-Cavity-Surface-Emitting-Lasers (VCSELs). The less practical alternative to the use of pressure is to grow a set of devices each at a slightly different operating wavelength which would require modifying nearly all of the layers. The subsequent difference in growth quality between such structures may then obscure the underlying physics governing device performance.VCSELs operating in the 650-700 nm range have a number of potential commercial uses such as laser projection displays [1], digital versatile disk systems (DVD) and ultra fast holographic memory systems [2]. Our specific interest is their use as the light source in short haul communication networks using inexpensive plastic fibres which have an attenuation minimum at 650 nm.Devices using the GaInP/AlGaInP material system are known to have a temperature dependent threshold current (I th ) which deteriorates towards shorter wavelengths (with decreasing indium fraction) due to thermally activated non-radiative carrier leakage from the direct G-conduction band minimum into the indirect X-minima [3,4]. Measurements on EELs have shown that at room temperature the leakage current (I leak ) forms approximately 20% of the total threshold current [5]. The Distributed Bragg

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Compact and ultrafast holographic memory using a surface-emitting microlaser diode array

Cited by 27 publications

References 6 publications

High-speed hybrid optical/digital correlator system

High-speed hybrid optical/digital correlator system

<title>Microlaser-based compact optical neuro-processors (Invited Paper)</title>

Assessing the Performance of Visible (665 nm) Vertical Cavity Surface Emitting Lasers Using High Pressure and Low Temperature Techniques

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