Compact BJT-Based Thermal Sensor for Processor Applications in a 14 nm tri-Gate CMOS Process

Oshita, Takao; Shor, Joseph; Duarte, D.; Kornfeld, A.; Zilberman, Dror

doi:10.1109/jssc.2015.2396522

Cited by 77 publications

(43 citation statements)

References 8 publications

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“…These temperature sensing modules sense the temperature either by using BJT (Bipolar Junction transistor)-based or by using MOSFET (Metal Oxide Semiconductor Field-effect transistor)-based circuit arrangements. The BJT-based temperature sensors are widely accepted due to their accurate temperature sensing ability that can be below ±1 • C [4][5][6][7]. For all MOSFET-based implementations, a temperature accuracy less than ±2 • C has been achieved [8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

A 40 nW CMOS-Based Temperature Sensor with Calibration Free Inaccuracy within ±0.6 °C

Chouhan

Halonen

2019

Electronics

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In this study, a temperature equivalent voltage signal was obtained by subtracting output voltages received from two individual temperature sensors. These sensors work in the subthreshold region and generate the output voltage signals that are proportional and complementary to the temperature. Over the temperature range of −40 ∘C to +85 ∘C without using any calibration method, absolute temperature inaccuracy less than ±0.6 ∘C was attained from the measurement of five prototypes of the proposed temperature sensor. The implementation was done in a standard 0.18 μ m CMOS technology with a total area of 0.0018 mm 2. The total power consumption is 40 nW for a supply voltage of 1.2 V measured at room temperature.

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Section: Introductionmentioning

confidence: 99%

A 40 nW CMOS-Based Temperature Sensor with Calibration Free Inaccuracy within ±0.6 °C

Chouhan

Halonen

2019

Electronics

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“…Small and accurate temperature sensor design is desired since temperature sensing accuracy is directly dependent on the distance between sensors and hotspots and sensor's circuit-level accuracy [1][2][3]. Existing sensors achieve impressive area and accuracy [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. However, emerging technology trends toward multicore architectures, 3D-IC, and ultra-dynamic-voltage-scaling (UDVS) make sensor designs to be even more demanding with the following requirements.…”

Section: Introductionmentioning

confidence: 99%

“…Recent BJT based sensor designs [6][7][8][9]17] successfully miniaturize their frontend footprint (as low as 360 µm 2 [17]) while meeting a relaxed accuracy requirement for DTM application. However, BJT based sensor designs have limited voltage scalability (e.g., minimum V DD > 1 V) and their size is still one or two orders of magnitude larger than digital standard cells (e.g., 10's of µm 2 or less).…”

Section: Introductionmentioning

confidence: 99%

A Sub-50 µm2, Voltage-Scalable, Digital-Standard-Cell-Compatible Thermal Sensor Frontend for On-Chip Thermal Monitoring

Kim

Seok

2018

JLPEA

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This paper presents an on-chip temperature sensor circuit for dynamic thermal management in VLSI systems. The sensor directly senses the threshold voltage that contains temperature information using a single PMOS device. This simple structure enables the sensor to achieve an ultra-compact footprint. The sensor also exhibits high accuracy and voltage-scalability down to 0.4 V, allowing the sensor to be used in dynamic voltage frequency scaling systems without requiring extra power distribution or regulation. The compact footprint and voltage scalability enables our proposed sensor to be implemented in a digital standard-cell format, allowing aggressive sensor placement very close to target hotspots in digital blocks. The proposed sensor frontend prototyped in a 65 nm CMOS technology has a footprint of 30.1 µm 2 , 3σ-error of ±1.1 • C across 0 to 100 • C after one temperature point calibration, marking a significant improvement over existing sensors designed for dynamic thermal management in VLSI systems.

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“…For BJT-based sensors, the systematic errors caused by the non-idealities in the readout circuitry are designed negligible. Hence, the random errors caused by process spread are the main errors and a costly calibration is needed to achieve high accuracy [1,2,3,4,5,6,7,8].…”

Section: Introductionmentioning

confidence: 99%

An auto-calibration technique for BJT-based CMOS temperature sensors

Kong

2017

IEICE Electron. Express

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To obtain high accuracy, CMOS temperature sensors need to be calibrated. The current available calibration techniques are manual ones. They are time-consuming and expensive. They are not suitable for chip mass production. To solve the problem, we present an individual and automatic calibration technique for BJT-based CMOS temperature sensors. It is an automatic voltage calibration using the trimming circuit based on the successive-approximation algorithm. Experimental results show that after a 2-second auto-calibration, the sensor can achieve an accuracy of −1°C∼ 1.5°C from −40°C to 100°C.

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Compact BJT-Based Thermal Sensor for Processor Applications in a 14 nm tri-Gate CMOS Process

Cited by 77 publications

References 8 publications

A 40 nW CMOS-Based Temperature Sensor with Calibration Free Inaccuracy within ±0.6 °C

A 40 nW CMOS-Based Temperature Sensor with Calibration Free Inaccuracy within ±0.6 °C

A Sub-50 µm2, Voltage-Scalable, Digital-Standard-Cell-Compatible Thermal Sensor Frontend for On-Chip Thermal Monitoring

An auto-calibration technique for BJT-based CMOS temperature sensors

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