Compact chromium oxide thin film resistors for use in nanoscale quantum circuits

Nash, C. R.; Fenton, J. C.; Constantino, N. G. N.; Warburton, Paul A.

doi:10.1063/1.4901933

Cited by 12 publications

(9 citation statements)

References 36 publications

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“…In a similar investigation, Nash et al [24] reported room temperature sheet resistance values in the range 28 Ω/sq to 32.6 KΩ/sq obtained by increasing the level of oxygen doping in the chromium oxide prepared by DC sputtering. They observed an increase in the sheet resistance values as the oxygen incorporation increased.…”

Section: Introductionmentioning

confidence: 86%

“…Hong et al [22] assumed no significant optical band gap difference between the crystalline and amorphous phase observed the changing of the direct band gap with an increase in deposition temperature from 4.7eV to 5.0eV for chromium oxide films prepared by DC reactive sputtering. Different deposition parameters such as substrate temperature or annealing temperature, oxygen flow rates and chamber pressure used during the deposition process can affect the resistivity properties of the thin films [23,24].…”

Section: Introductionmentioning

confidence: 99%

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Influence of RF power on the stoichiometry, optical, and electrical properties of chromium oxide coatings prepared by reactive magnetron sputtering

Oje¹,

Ogwu²,

Oje³

et al. 2019

Mater. Res. Express

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An investigation has been carried out on the stoichiometry, optical and electrical properties of chromium oxide thin films prepared under various deposition powers using RF magnetron sputtering technique. The elemental and chemical composition of the prepared films were characterised by energy dispersive X-ray (EDX) analysis, Raman spectroscopy and Fourier transform infrared spectroscopy (FTIR). The wettability and surface energies of the thin films were investigated with a goniometer. The four-point electrical probe method was used to determine the electrical resistivity of the films while the optical properties of the films were measured with a spectrophotometer. The coatings were found to be mainly 2 3 phase based on the dominance of A1g and Eg symmetric modes in the Raman investigations and the Eu vibration mode in the FTIR measurements. The RF powers used during the deposition process were found to have played a vital role in the formation of Cr 2 O 3 rich films. It was observed that higher deposition power facilitated both the dislodging of more chromium atoms from the target and dissociation of oxygen used during the deposition process. The wettability results show that the thin films are hydrophilic and interact well with water and this behaviour is linked to the contribution of the polar component to the total surface energy. Optical transmittance values exceeding 70% were obtained for the films prepared at a lower RF power. The resistivity values varied from 0.061 Ω cm to 0.152 Ω cm for the deposited chromium oxide films. The variation in the electrical resistivity and the optical transmittance of the films with RF power indicate that these film properties can be altered or tuned to suit specific applications e.g. as transparent conducting oxide (TCO) for optoelectronic devices and other similar applications.

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Section: Introductionmentioning

confidence: 86%

Section: Introductionmentioning

confidence: 99%

Influence of RF power on the stoichiometry, optical, and electrical properties of chromium oxide coatings prepared by reactive magnetron sputtering

Oje¹,

Ogwu²,

Oje³

et al. 2019

Mater. Res. Express

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“…To provide series resistance for the nanowire circuits, we use electron beam lithography, reactive DC magnetron sputtering and lift-off to produce thin-film chromium oxide resistors with typical sheet resistance

kΩ, in a process we have described in detail elsewhere [ 28 ]. We pattern gold interconnects between resistors and NbN components, wiring and bond pads using EBL, DC magnetron sputtering and lift-off, using a Ti or Cr adhesion layer and an argon-ion mill clean step in situ immediately prior to gold deposition.…”

Section: Methodsmentioning

confidence: 99%

“…Thin-film inductors may be formed by wider lengths of the same superconducting material, which have substantial kinetic inductance in the superconducting state, but which are wide enough that their quantum phase-slip rate is negligible. If thin-film resistors are required, these may be formed by depositing an additional material to form part of the circuit [ 28 ].…”

Section: Introductionmentioning

confidence: 99%

Emergence of Quantum Phase-Slip Behaviour in Superconducting NbN Nanowires: DC Electrical Transport and Fabrication Technologies

et al. 2018

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Superconducting nanowires undergoing quantum phase-slips have potential for impact in electronic devices, with a high-accuracy quantum current standard among a possible toolbox of novel components. A key element of developing such technologies is to understand the requirements for, and control the production of, superconducting nanowires that undergo coherent quantum phase-slips. We present three fabrication technologies, based on using electron-beam lithography or neon focussed ion-beam lithography, for defining narrow superconducting nanowires, and have used these to create nanowires in niobium nitride with widths in the range of 20–250 nm. We present characterisation of the nanowires using DC electrical transport at temperatures down to 300 mK. We demonstrate that a range of different behaviours may be obtained in different nanowires, including bulk-like superconducting properties with critical-current features, the observation of phase-slip centres and the observation of zero conductance below a critical voltage, characteristic of coherent quantum phase-slips. We observe critical voltages up to 5 mV, an order of magnitude larger than other reports to date. The different prominence of quantum phase-slip effects in the various nanowires may be understood as arising from the differing importance of quantum fluctuations. Control of the nanowire properties will pave the way for routine fabrication of coherent quantum phase-slip nanowire devices for technology applications.

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“…cross-sectional Scanning Electron Microscopy (SEM, wide range of thicknesses but destructive and slow) and wet chemical analysis (e.g., atomic absorption, require sample destruction). Other well-known methods are ellipsometry [1] and profilometry [2]. However, ellipsometry is not applicable to metallic coatings because for thicknesses over 50 nm works only for optically transparent coatings.…”

Section: Introductionmentioning

confidence: 99%

X-ray Microanalysis of Precious Metal Thin Films: Thickness and Composition Determination

2018

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Abstract:Measuring the thickness and the composition of precious metal thin films is a challenging task. Currently, the available techniques for thickness measurements are either destructive or need heavy assumptions on the nature of the sample, relying on information that are not always available with sufficient accuracy. In this paper we propose a new methodology based on X-ray microanalysis that can complement, with better lateral resolution, the use of X-ray Fluorescence, the most widely employed technique for measuring the thickness of electrodeposited coatings. The proposed method employs a combination of energy dispersive microanalysis spectra acquisition and Monte Carlo simulation. The effectiveness of the technique has been demonstrated by the measure of the thickness and the composition of a thin 24 kt gold electroplated film that contained small amount of nickel. Results have been validated by comparing data with those obtained by X-ray fluorescence and the scanning electron microscopy of metallographic cross-sections.

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Compact chromium oxide thin film resistors for use in nanoscale quantum circuits

Cited by 12 publications

References 36 publications

Influence of RF power on the stoichiometry, optical, and electrical properties of chromium oxide coatings prepared by reactive magnetron sputtering

Influence of RF power on the stoichiometry, optical, and electrical properties of chromium oxide coatings prepared by reactive magnetron sputtering

Emergence of Quantum Phase-Slip Behaviour in Superconducting NbN Nanowires: DC Electrical Transport and Fabrication Technologies

X-ray Microanalysis of Precious Metal Thin Films: Thickness and Composition Determination

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