Compact design of high voltage switch for pulsed power applications

Appiah, Gideon N.; Jang, Sung-Roc; Bae, Jung-Soo; Cho, Chan-Gi; Song, Seung-Ho; Ryoo, Hong-Je

doi:10.1109/tdei.2017.006272

Cited by 11 publications

(2 citation statements)

References 23 publications

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“…For simplicity, we performed measurements on the ambient air, however, encapsulating the device under modified pressures [19] can be used to manipulate the threshold voltage, which would enable achieving higher powers in small gaps. In addition, a lower load resistance could be employed to absorb a much higher instantaneous power [20]; this is in particular interesting for microplasma switches as they can handle very high current levels.…”

Section: Experiments and Resultsmentioning

confidence: 99%

Kilowatt-Range Picosecond Switching Based on Microplasma Devices

Nikoo

Jafari

Erp

et al. 2021

IEEE Electron Device Lett.

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Plasma formation in micro-and nano-scales enables an ultrahigh-dv/dt picosecond switching in an integrated circuit form factor. Such on-chip plasma devices could provide a transformative approach to achieving highpower levels at very high frequencies, far surpassing the best performance of conventional III-V electronics. In this work, we demonstrate the application of scaled-up nanoand microplasma switches as discrete devices in highperformance picosecond pulsed-power sources. A prototype circuit, utilizing the fabricated plasma devices operating as the switch, shows a high voltage-rising-rate beyond 10 kV ns −1 at 15 kW peak power. The pulsed-power source exhibits a sub-100 ps rise-time (without deembedding). The device has the capability of reaching exceptionally high current densities up to 325 A mm −1 . The switches are compatible with planar semiconductor fabrication, enabling their integration with other electronic devices and microwave components, which opens pathways towards the future ultrahigh power density picosecond pulsed-power sources.

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Section: Experiments and Resultsmentioning

confidence: 99%

Kilowatt-Range Picosecond Switching Based on Microplasma Devices

Nikoo

Jafari

Erp

et al. 2021

IEEE Electron Device Lett.

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“…21) To solve this problem, power semiconductor devices have been used as switches. [21][22][23] Bipolar power semiconductor devices such as IGBTs and SI thyristors can achieve high capacity, but are inferior in highspeed operation. Compared to them, MOSFETs are relatively low-capacity and high-speed devices.…”

Section: Introductionmentioning

confidence: 99%

Development of palm-sized gas treatment device utilizing streamer discharges generated by compact resonant high-voltage pulse generator

Takahashi

Suzuki

Saito

et al. 2023

Jpn. J. Appl. Phys.

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A compact and lightweight gas treatment system integrated with a high-voltage pulse generator driven by SiC-MOSFET and wires-to-wires electrode. The maximum amplitude and pulse width of the output voltage of the pulse generator without load are 10 kV and 31 ns, respectively, and the maximum energy transfer efficiency reaches 88% with a load resistance of 0.44 k. This pulse generator was applied to a multilayered wires-to-wires electrodes and the streamer discharges propagate between the electrodes was observed. Streamers initially propagates horizontally according to the Laplacian electric field near the high-voltage electrode. When they approach the ground electrodes, they curve and propagate toward the ground electrode due to the high electric field between the streamer head and the ground electrode. The velocity of the streamer propagation is with a velocity of 0.4 to 0.71 × 106 m/s. Ozone production and ethylene removal characteristics are investigated in a sealed vessel.

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