Compact GaN Power ICs with Power HEMT, Gate Driver, Temperature Sensor, Current Sense-FET and Amplifier

Basler, Michael; Reiner, Richard; Moench, Stefan; Waltereit, Patrick; Quay, R.; Haarer, Jorg

doi:10.1109/ispsd57135.2023.10147498

Cited by 4 publications

(2 citation statements)

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“…This is a possible explanation for why the sensor gain differs by around 30% between the positive and negative current phases. In a previous work, a GaN half-bridge with integrated current-mirror sensors (similar to this work, but not in a three-phase configuration) from a more stable normally-off wafer run was experimentally characterized [ 64 ], and showed a good match of theoretical and measured current ratio. Thus, a higher sensor sensitivity, more close to the theoretical values, can be expected when fabricating future ICs with a more stable technology.…”

Section: Resultsmentioning

confidence: 72%

“…One bond pad for each source of the sense-HEMTs forms the electrical interface to external readout circuits. The IC also integrates an isolated temperature sensor (resistive gold–metal meander trace [ 63 ], two bond pads), and a monolithic differential amplifier (five bond pads) as in [ 64 ]. The integrated one-stage differential amplifier is not used in this work, but can be extended to a multi-stage and high-gain integrated amplifier circuit as was experimentally demonstrated in [ 41 ] for current-sensing purposes.…”

Section: Materials and Methodsmentioning

confidence: 99%

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Three-Phase Motor Inverter and Current Sensing GaN Power IC

Moench

Reiner

Basler

et al. 2023

Sensors

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A three-phase GaN-based motor inverter IC with three integrated phase current mirror sensors (sense-FETs or sense-HEMTs, 1200:1 ratio), a temperature sensor, and an amplifier is presented and experimentally operated. The three low-side currents are read out by virtual grounding transimpedance amplifiers. A modified summed DC current readout circuit using only one amplifier is also discussed. During continuous 24 V motor operation with space-vector pulse width modulation (SVPWM), the sensor signal is measured and a bidirectional measurement capability is verified. The measured risetime of the sensor signal is 51 ns, indicating around 7 MHz bandwidth (without intentional optimization for high bandwidth). The IC is operated up to 32 V on DC-biased semi-floating substrate to limit negative static back-gating of the high-side transistors to around −7% of the DC-link voltage. Analysis of the capacitive coupling from the three switch-nodes to the substrate is calculated for SVPWM based on capacitance measurement, resulting in four discrete semi-floating substrate voltage levels, which is experimentally verified. Integrated advanced power converter topologies with sensors improve the power density of power electronics applications, such as for low-voltage motor drive.

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Section: Resultsmentioning

confidence: 72%