Compact Grating Coupler for 700-nm Silicon Nitride Strip Waveguides

Zhao, Xiangjie; Li, Danping; Zeng, Cheng; Gao, Ge; Huang, Zengzhi; Huang, Qinzhong; Wang, Yi; Xia, Jinsong

doi:10.1109/jlt.2015.2510025

Cited by 29 publications

(14 citation statements)

References 23 publications

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“…We attribute the excess loss to a less than optimal 300 μm long waveguide taper. The taper loss can be reduced by using either longer adiabatic tapers [11], focusing gratings [12] or compact tapers [39]. Since the test structure has smooth transition due to adiabatic tapering, we do not observe any ripples in the measured spectrum.…”

Section: Resultsmentioning

confidence: 80%

High-Efficiency Grating Coupler in 400 nm and 500 nm PECVD Silicon Nitride With Bottom Reflector

et al. 2019

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We design and experimentally demonstrate highly efficient Silicon Nitride based grating couplers with bottom distributed Bragg reflectors. All the layers were deposited using plasma enhanced chemical vapor deposition processing. We present gratings on two Silicon Nitride thickness (400 nm and 500 nm) platforms. On a 500 nm thick Silicon Nitride, we show a peak coupling efficiency of −2.29 dB/coupler at a wavelength of 1573 nm with a 1 dB bandwidth of 49 nm. On a 400 nm thick platform, we demonstrate a coupling efficiency of −2.58 dB/coupler at 1576 nm with a 1 dB bandwidth of 52 nm. The demonstrated coupling efficiency is the best reported as yet, for both 400 nm and 500 nm thick, plasma deposited Silicon Nitride platforms.

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Section: Resultsmentioning

confidence: 80%

High-Efficiency Grating Coupler in 400 nm and 500 nm PECVD Silicon Nitride With Bottom Reflector

et al. 2019

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“…Implementing efficient GCs in a thick waveguide layer can be quite challenging, as the excitation of higher-order vertical Bloch modes inside the grating usually leads to a drastic deterioration of the CE. This problem was mitigated in [95], where a UGC with a peak CE of 43% (−3.7 dB) and a 1-dB bandwidth of 54 nm was implemented in a 700 nm thick silicon nitride-on-insulator (SNOI) platform. In that case, to prevent the excitation of high-order Bloch modes, the access waveguide was etched down to the same level as the grating trenches, and an inverse taper was used to connect the Si 3 N 4 strip waveguide and the grating section, as shown in Fig.…”

Section: Large-bandwidth Grating Couplersmentioning

confidence: 99%

“…Compared with [97], a thicker SiO 2 separation layer (H 1.68 μm) was placed in between the 400 nm thick Si 3 N 4 layer, where the actual fully etched apodized grating was implemented, and the 220 nm thick Si layer, where a fully etched grating was designed to act as a bottom reflector. By careful optimization [95]. The access waveguide thickness (t) is equal to thickness of the native Si 3 N 4 layer (t SN ) minus the etch depth (t g ).…”

Section: Large-bandwidth Grating Couplersmentioning

confidence: 99%

“…The access waveguide thickness (t) is equal to thickness of the native Si 3 N 4 layer (t SN ) minus the etch depth (t g ). (Bottom) Schematic top view of the focusing GC structure proposed in [95], where an inverse taper was used to connect the grating section and the Si 3 N 4 strip waveguides. The optimized geometrical parameters are W t 150 nm, W e 4 μm, W g 900 nm, and L t 20 μm.…”

Section: Large-bandwidth Grating Couplersmentioning

confidence: 99%

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Coupling strategies for silicon photonics integrated chips [Invited]

Marchetti¹,

Lacava²,

Carroll³

et al. 2019

Photon. Res.

437

206

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Over the last 20 years, silicon photonics has revolutionized the field of integrated optics, providing a novel and powerful platform to build mass-producible optical circuits. One of the most attractive aspects of silicon photonics is its ability to provide extremely small optical components, whose typical dimensions are an order of magnitude smaller than those of optical fiber devices. This dimension difference makes the design of fiberto-chip interfaces challenging and, over the years, has stimulated considerable technical and research efforts in the field. Fiber-to-silicon photonic chip interfaces can be broadly divided into two principle categories: in-plane and out-of-plane couplers. Devices falling into the first category typically offer relatively high coupling efficiency, broad coupling bandwidth (in wavelength), and low polarization dependence but require relatively complex fabrication and assembly procedures that are not directly compatible with wafer-scale testing. Conversely, out-of-plane coupling devices offer lower efficiency, narrower bandwidth, and are usually polarization dependent. However, they are often more compatible with high-volume fabrication and packaging processes and allow for on-wafer access to any part of the optical circuit. In this paper, we review the current state-of-the-art of optical couplers for photonic integrated circuits, aiming to give to the reader a comprehensive and broad view of the field, identifying advantages and disadvantages of each solution. As fiber-to-chip couplers are inherently related to packaging technologies and the co-design of optical packages has become essential, we also review the main solutions currently used to package and assemble optical fibers with silicon-photonic integrated circuits.

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“…The grating coupler is capable of wafer-level testing and enhancing on-chip compactness. However, for a uniform grating coupler based on a standard 220 nm-thick silicon silicon-on-insulator (SOI) platform, there are also some disadvantages such as low coupling efficiency, wavelength and polarization sensitivity, which make them inappropriate for WDM applications [11][12][13]. As for the butt coupling or package with conventional cleaved optical fiber, the edge coupler is more convenient to use, which can achieve higher coupling efficiency, a much more flexible operating wavelength and less dependence on polarization than grating coupler [7,14].…”

Section: Introductionmentioning

confidence: 99%

Novel Low-Loss Fiber-Chip Edge Coupler for Coupling Standard Single Mode Fibers to Silicon Photonic Wire Waveguides

et al. 2021

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Fiber-to-chip optical interconnects is a big challenge in silicon photonics application scenarios such as data centers and optical transmission systems. An edge coupler, compared to optical grating, is appealing to in the application of silicon photonics due to the high coupling efficiency between standard optical fibers (SMF-28) and the sub-micron silicon wire waveguides. In this work, we proposed a novel fiber–chip edge coupler approach with a large mode size for silicon photonic wire waveguides. The edge coupler consists of a multiple structure which was fulfilled by multiple silicon nitride layers embedded in SiO2 upper cladding, curved waveguides and two adiabatic spot size converter (SSC) sections. The multiple structure can allow light directly coupling from large mode size fiber-to-chip coupler, and then the curved waveguides and SSCs transmit the evanescent field to a 220 nm-thick silicon wire waveguide based on the silicon-on-insulator (SOI) platform. The edge coupler, designed for a standard SMF-28 fiber with 8.2 μm mode field diameter (MFD) at a wavelength of 1550 nm, exhibits a mode overlap efficiency exceeding 95% at the chip facet and the overall coupling exceeding 90%. The proposed edge coupler is fully compatible with standard microfabrication processes.

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Compact Grating Coupler for 700-nm Silicon Nitride Strip Waveguides

Cited by 29 publications

References 23 publications

High-Efficiency Grating Coupler in 400 nm and 500 nm PECVD Silicon Nitride With Bottom Reflector

High-Efficiency Grating Coupler in 400 nm and 500 nm PECVD Silicon Nitride With Bottom Reflector

Coupling strategies for silicon photonics integrated chips [Invited]

Novel Low-Loss Fiber-Chip Edge Coupler for Coupling Standard Single Mode Fibers to Silicon Photonic Wire Waveguides

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