Compact lateral thermal resistance modeling and characterization for TSV and TSV array

Liu, Zao; Swarup, Sahana; Tan, Sheldon X.-D.

doi:10.1109/iccad.2013.6691132

Cited by 13 publications

(4 citation statements)

References 11 publications

(11 reference statements)

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“…Recently, the study presented in [8] shows that poorly considering TSV arrays may imply on spatial accuracy loss. The lateral thermal blockage effect caused by the thin SiO 2 insulation layer of TSVs may result in exacerbated hotspots when TSVs are placed around.…”

Section: B Thermal Impact Of Tsv Arrays On Hotspotsmentioning

confidence: 98%

Thermal modeling methodology for efficient system-level thermal analysis

Santos

Vivet

Matter³

et al. 2014

Proceedings of the IEEE 2014 Custom Integrated Circuits Conference

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Heat dissipation is assumed to be one of the major challenges in the promising 3D integration technology. Very fine grain structures like TSVs and µ-bumps have considerable impact on heat dissipation properties. However, properly considering individual details of multi-length scale systems is still a challenge for efficient system-level thermal analysis. This paper presents a compact thermal modeling approach targeting fast steady-state and transient thermal analysis. The proposed method associates material homogenization and formal reduction techniques for model simplification, enabling to concurrently handle fine grain structures and constraints from board and package modeling. As a result, a dynamic compact thermal model is achieved offering system-level exploration capabilities. Simulation results of a complete system including a packaged 65nm memory-on-logic 3D circuit, socket and board show the thermal model is able to capture hotspot effects with fast simulation times. Comparisons with temperature measurements on the fabricated circuit demonstrate that accurate system-level thermal model of multi-length scale systems is feasible, showing an average error of 3.96% for steady-state temperature. Secondly, this paper reports an investigation study to show the thermal impact of TSV arrays, vertical stacking and die thickness, showing that 3D integration technology parameters considerably impacts silicon temperature and therefore should be properly modeled for accurate thermal analysis.

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Section: B Thermal Impact Of Tsv Arrays On Hotspotsmentioning

confidence: 98%

Thermal modeling methodology for efficient system-level thermal analysis

Santos

Vivet

Matter³

et al. 2014

Proceedings of the IEEE 2014 Custom Integrated Circuits Conference

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“…The threshold voltage shifts introduced by TSVs are less than 25 mV [ 15 ]. Thus, the pulse frequency, oxide thickness, the radius of TSVs, and the space between TSVs have been investigated [ 16 , 17 , 18 ].…”

Section: Introductionmentioning

confidence: 99%

Modeling and Validation of Total Ionizing Dose Effect on the TSVs in RF Microsystem

Yang

Shan

et al. 2023

Micromachines

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Radio frequency (RF) systems utilizing through-silicon vias (TSVs) have been widely used in the aerospace and nuclear industry, which means that studying the total ionizing dose (TID) effect on TSV structures has become necessary. To investigate the TID effect on TSV structures, a 1D TSV capacitance model was established in COMSOL Multiphysics (COMSOL), and the impact of irradiation was simulated. Then, three types of TSV components were designed, and an irradiation experiment based on them was conducted, to validate the simulation results. After irradiation, the S21 degraded for 0.2 dB, 0.6 dB, and 0.8 dB, at the irradiation dose of 30 krad (Si), 90 krad (Si), 150 krad (Si), respectively. The variation trend was consistent with the simulation in the high-frequency structure simulator (HFSS), and the effect of irradiation on the TSV component was nonlinear. With the increase in the irradiation dose, the S21 of TSV components deteriorated, while the variation of S21 decreased. The simulation and irradiation experiment validated a relatively accurate method for assessing the RF systems’ performance under an irradiation environment, and the TID effect on structures similar to TSVs in RF systems, such as through-silicon capacitors.

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“…A lot of numerical thermal analyses for TSVs have been done [9], [10] and recently, some analytical thermal models considering lateral thermal resistance were proposed [11], [12]. However, more efficient methods are still needed to describe and quantify metal core warming in TSVs.…”

Section: Introductionmentioning

confidence: 99%

Modeling and characterization of Joule heating in metal core of TSV

Wei

2014

2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction M

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Through silicon via (TSV) is the critical structure for three dimensional package technology, which provides vertical interconnections between stacking dies and interposers. However, for TSVs, there are still some reliability problems and metal core warming of TSVs is involved in most of the causes. Thus, accurate and efficient thermal modeling methods describing and quantifying metal core warming for TSVs are vital for 3D IC package designs. In this paper, we propose a new physics-based metal core warming model mainly considering Joule heating for both a single TSV and multi TSVs. Comparisons of the modeling results and the numerical analyses demonstrate that our models capture the warming in the metal cores of a maximum error of 0.27% with a large reduction of time-consuming as well as calculation resources. Keywords-Trough silicon via (TSV); metal core; interposer; thermal model; analytical method2014 15th International Conference on Electronic Packaging Technology 978-1-4799-4707-2/14/$31.00 ©2014 IEEE

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Compact lateral thermal resistance modeling and characterization for TSV and TSV array

Cited by 13 publications

References 11 publications

Thermal modeling methodology for efficient system-level thermal analysis

Thermal modeling methodology for efficient system-level thermal analysis

Modeling and Validation of Total Ionizing Dose Effect on the TSVs in RF Microsystem

Modeling and characterization of Joule heating in metal core of TSV

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