Compact low voltage high-Q CMOS active inductor suitable for RF applications

Uyanik, Hayri Ugur; Tarim, N.

doi:10.1007/s10470-007-9065-5

Cited by 68 publications

(3 citation statements)

References 9 publications

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“…Table 2 compares the performance of the proposed active inductor with the results in Refs. [11,[20][21][22][23]. The performance…”

Section: Noise Voltage and Iip3mentioning

confidence: 99%

Performance analysis of a low power low noise tunable band pass filter for multiband RF front end

Manjula¹,

Malarvizhi²

2014

J. Semicond.

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This paper presents a low power tunable active inductor and RF band pass filter suitable for multiband RF front end circuits. The active inductor circuit uses the PMOS cascode structure as the negative transconductor of a gyrator to reduce the noise voltage. Also, this structure provides possible negative resistance to reduce the inductor loss with wide inductive bandwidth and high resonance frequency. The RF band pass filter is realized using the proposed active inductor with suitable input and output buffer stages. The tuning of the center frequency for multiband operation is achieved through the controllable current source. The designed active inductor and RF band pass filter are simulated in 180 nm and 45 nm CMOS process using the Synopsys HSPICE simulation tool and their performances are compared. The parameters, such as resonance frequency, tuning capability, noise and power dissipation, are analyzed for these CMOS technologies and discussed. The design of a third order band pass filter using an active inductor is also presented.

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“…Table 2 compares the performance of the proposed active inductor with the results in Refs. [11,[20][21][22][23]. The performance…”

Section: Noise Voltage and Iip3mentioning

confidence: 99%

Performance analysis of a low power low noise tunable band pass filter for multiband RF front end

Manjula¹,

Malarvizhi²

2014

J. Semicond.

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“…In this paper, filters called as MOS-only filters, which do not employ any external passive components, neither capacitors nor inductors, but rather which exploit the intrinsic capacitors of the MOS transistors are studied [1][2][3][4][5][6][7][8]. These circuits provide very useful advantages from IC realization viewpoint such as: i) low occupied chip area as a result of using as reactive component MOS capacitances with higher capacitance density compared to those of intentional, external capacitors.…”

Section: Introductionmentioning

confidence: 99%

Design considerations of MOS-only allpass filters

Yildiz

Toker

Kılınç

et al. 2015

2015 9th International Conference on Electrical and Electronics Engineering (ELECO)

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In this paper, a simple filter topology that can be used to implement first-order MOS-only allpass filter is proposed. The proposed MOS-only allpass filter offers inherently very accurate magnitude and phase characteristics at very high frequencies. However, MOS-only active filter suffers from an inherent low frequency limitation. In order to address this issue, the modification technique allowing the derivation of MOS-only filter which allow extension of the operating frequency towards lower frequency region is proposed. Detailed simulations results of the filter modified according to the proposed technique are also provided in order to verify the usefulness of the theoretical approach.

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“…But it is difficult to fabricate high Q inductors and also it requires large silicon area [5]. To avoid this problem, in many applications differential ring oscillator based VCO is employed.…”

Section: Introductionmentioning

confidence: 99%

A high performance 1 GHz voltage controlled oscillator using neural system architecture

RoyChaudhuri

Barma

2010

Analog Integr Circ Sig Process

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In this paper, an improved voltage controlled oscillator scheme with temperature compensated frequency, a wide linear range, low phase noise and low power dissipation is presented for application in transmitting signals of gas sensors from mines using RF communication. The basic unit of the oscillator is a ring based differential amplifier incorporating temperature compensated voltage dependent PMOS capacitors and standard PMOS triode connected load with temperature compensated biasing scheme. The increased nonlinearity in the presence of PMOS capaciors is reduced to 0.001% using a digitally programmable neural architecture which is simulated in the mixed signal domain of SYNOPSYS. Additionally, the temperature compensated PMOS capacitor improves the sensitivity of the VCO and the standard temperature compensated biasing scheme of the PMOS triode connected load reduces the drift in amplitude with temperature variation. The PMOS varactor lowers the phase noise of the VCO compared to parasitic capacitors without increasing the power dissipation. The entire VCO is designed using 0.18 lm typical technology of TSMC with 1.8 V power supply. The tuning range of the VCO is 0.3-1.7 V, maximum frequency is 1 GHz with a linear change of around 750 MHz, temperature sensitivity and power consumption are around 50 ppm/°C and 2 mW respectively. The phase noise is obtained to be around123dBc/Hz at 1 MHz offset frequency.

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Compact low voltage high-Q CMOS active inductor suitable for RF applications

Cited by 68 publications

References 9 publications

Performance analysis of a low power low noise tunable band pass filter for multiband RF front end

Performance analysis of a low power low noise tunable band pass filter for multiband RF front end

Design considerations of MOS-only allpass filters

A high performance 1 GHz voltage controlled oscillator using neural system architecture

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