Compact model of power MOSFET with temperature dependent Cauer RC network for more accurate thermal simulations

Marek, Juraj; Chvála, Aleš; Donoval, D.; Pribytny, Patrik; Molnar, Marian; Mikolášek, Miroslav

doi:10.1016/j.sse.2014.02.003

Cited by 27 publications

(8 citation statements)

References 7 publications

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“…The 1-D Cauer-type thermal networks used to calculate the device temperature under SC operating conditions without considering the variation of material properties with temperature were shown in [8], [9], [11], [13], and [37]. On the other hand, temperature-dependent R-C Cauer thermal networks were proposed in, e.g., [40], [51], and [52]. The authors in [51] showed that the effect of heat volume generation and top metallization should be considered and included in 1-D models to estimate the temperature distribution during the fast transients occurring under UIS tests physically more accurately; however, they used temperature-dependent thermal resistors and constant thermal capacitors analyzing silicon CoolMOS devices.…”

Section: -D Thermal Network For the Sic Power Mosfetmentioning

confidence: 99%

“…On the other hand, temperature-dependent R-C Cauer thermal networks were proposed in, e.g., [40], [51], and [52]. The authors in [51] showed that the effect of heat volume generation and top metallization should be considered and included in 1-D models to estimate the temperature distribution during the fast transients occurring under UIS tests physically more accurately; however, they used temperature-dependent thermal resistors and constant thermal capacitors analyzing silicon CoolMOS devices. The analysis presented in [52] was focused only on the nominal operation of SiC power devices, and not on fast temperature transients.…”

Section: -D Thermal Network For the Sic Power Mosfetmentioning

confidence: 99%

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Accurate Temperature Estimation of SiC Power mosfets Under Extreme Operating Conditions

Tsibizov

Kovacevic-Badstuebner

Kakarla

et al. 2020

IEEE Trans. Power Electron.

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Electrothermal modeling of silicon carbide (SiC) power devices is frequently performed to estimate the device temperature in operation, typically assuming a constant thermal conductivity and/or heat capacity of the SiC material. Whether and by how much the accuracy of the resulting device temperature prediction under these assumptions is compromised has not been investigated so far. Focusing on high-temperature operating conditions as found under short circuit (SC), this paper presents a comprehensive analysis of thermal material properties determining the temperature distribution inside SiC power MOSFETs. Using a calibrated technology computer-aided design (TCAD) electrothermal model, it is demonstrated that the temperature prediction of SiC power devices under SC operation when neglecting either the top metallization or the temperature dependence of the heat capacity is inaccurate by as high as 25%. The presented analysis enables to optimize compact electrothermal models in terms of accuracy and computational time, which can be used to assess the maximum temperature of SiC power MOSFETs in both discrete packages and multichip power modules exposed to fast thermal transients. A onedimensional thermal network of a SiC power MOSFET is proposed based on the thermal material properties, the size of the active area of the device, and its thickness. Index Terms-Electrothermal (ET) modeling, short circuit (SC), silicon carbide (SiC), TCAD, thermal conductivity. I. INTRODUCTIONW ITH the ever-increasing requirements for energy saving, the adoption of silicon carbide (SiC) power transistors has been following a growing trend across different power electronic (PE) applications, including electrical vehicles (EVs), EV charging infrastructure, power factor correction, power supply, photovoltaics, uninterruptible power supplies, motor drives, wind, and rail [1]. Increasing the acceptance of the emerging SiC technology in the field of high-frequency, high-temperature, and/or high-power applications needs to be supported by a comprehensive understanding of SiC material properties and their influence on the system performance. Nowadays, multiphysics modeling tools based on the underlying physics of the SiC material are widely employed both in academia and industry to

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Section: -D Thermal Network For the Sic Power Mosfetmentioning

confidence: 99%

Section: -D Thermal Network For the Sic Power Mosfetmentioning

confidence: 99%

Accurate Temperature Estimation of SiC Power mosfets Under Extreme Operating Conditions

Tsibizov

Kovacevic-Badstuebner

Kakarla

et al. 2020

IEEE Trans. Power Electron.

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“…Because an undesirable SC fault may occur in a variety of ways during the lifetime of the devices and at least 2 μs is needed for the commercial drivers to react. However, due to external effects and oscilations, SC event may occur many times during operational lifetime, therefore, the repetitive SC tests could reflect the impact of a single SC event and also provide more insights about the degradation process [7][8]. With the aid of repetitive SC tests, aging indicators can be explored comprehensively.…”

Section: Introductionmentioning

confidence: 99%

Degradation of Power SiC MOSFET under Repetitive UIS and Short Circuit Stress

Marek¹,

Kozárik²,

Chvála³

et al. 2021

ISPS'21 Proceedings

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This paper investigates the reliability of commercial planar and trench 1.2-kV 4H-SiC MOFSETs under repetitive unclamped inductive switching (UIS) and short circuit (SC) stresses. The degradation of device characteristics, including the transfer characteristics, drain leakage current Idss, and output characteristics, is observed. Repetitive SC stress was performed for 400 and 600 V bus voltages. Increased buss voltages during stress have higher impact on electrical performance of tested devices. The hot carriers injection and trapping into the gate oxide in the channel region may occur during the aging experiments and are believed to be responsible for the variation of electrical parameters.

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“…Methods using nonlinear thermal networks directly obtained by discretizing the heat diffusion equations are reported in [22] and [23]; these works propose strategies for managing the large computational complexity of ET simulations when directly using thermal circuits derived by discretization. Following [18], nonlinear CTNs (NCTNs) with Cauer topology have been conceived: in [24], a network with power-dependent resistors and capacitors is determined by fitting with thermal impedances measured in the time domain for various power levels; in [25], a network with temperature-dependent resistors is generated through a physics-based procedure verified by comparison with 3-D numerical results. Another strategy for constructing geometry-scalable NCTNs involves the use of simplifying assumptions on the heat propagation in the specific domain under analysis, as performed in [26] for trench-isolated heterojunction bipolar transistors.…”

Section: Introductionmentioning

confidence: 99%

Circuit-Based Electrothermal Simulation of Power Devices by an Ultrafast Nonlinear MOR Approach

Codecasa

d’Alessandro

Magnani

et al. 2016

IEEE Trans. Power Electron.

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This paper presents an efficient circuit-based approach for the nonlinear dynamic electrothermal simulation of power devices and systems subject to radical self-heating. The strategy relies on the synthesis of a nonlinear compact thermal network extracted from a finite-element model by a novel modelorder reduction method requiring a computational time orders of magnitude lower than conventional techniques. Unlike commonly employed approaches, the proposed network allows reconstructing the whole time evolution of the temperature field in all the points of the domain with high accuracy. Electrothermal simulations are enabled in a commercial SPICE-like simulator by coupling such a network with subcircuits that describe the electrical device behavior by accounting for the temperature dependence of the key physical parameters. As a case study, the dynamic electrothermal analysis of a packaged silicon carbide power MOSFET undergoing a short-circuit test is performed, showcasing the performance of the approach and highlighting the need of including the thermal nonlinearities to achieve reliable results.

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Compact model of power MOSFET with temperature dependent Cauer RC network for more accurate thermal simulations

Cited by 27 publications

References 7 publications

Accurate Temperature Estimation of SiC Power mosfets Under Extreme Operating Conditions

Accurate Temperature Estimation of SiC Power mosfets Under Extreme Operating Conditions

Degradation of Power SiC MOSFET under Repetitive UIS and Short Circuit Stress

Circuit-Based Electrothermal Simulation of Power Devices by an Ultrafast Nonlinear MOR Approach

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