Compact Modeling and SPICE Simulation of GCMO-Based Resistive Switching Devices

Abstract

<p>This work reports a compact behavioral model for the hysteretic conduction characteristics of Al/Gd<sub>0.1</sub>Ca<sub>0.9</sub>MnO<sub>3</sub>(GCMO)/Au resistive switching devices suitable for SPICE simulations. The devices are nonvolatile, forming-less, compliance-free, and self-rectifying multistate memristive structures which makes them of maximum interest for neuromorphic computing and memory applications. The proposed model relies on two coupled equations, one for the electron transport and a second one for the vacancy displacement. The proposed model considers a novel approach for solving the internal state of the device based on the so-called generalized quasi-static hysteron whose application can be extended to other structures and dynamics in addition to the ones discussed here. </p>