Compact Modeling of Carbon Nanotube Transistor and Interconnects

Cao, Yu; Sinha, Saurabh; Balijepalli, A.

doi:10.5772/39427

Cited by 1 publication

(6 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the CNTFET considered in this work, the quantum confinement effect along the azimuthal direction gives rise to subbands, and the one-dimensional (1D) effective-mass Hamiltonian for the lowest subband of the nanotube can be defined as follows [6]…”

Section: Negf Equationsmentioning

confidence: 99%

“…Self-consistent calculation: We repeat the steps of solving the coupled 2D Poisson 1D NEGF equations until a self-consistent potential is obtained. Once self-consistency is achieved, the drain current for coherent transport under a bias voltage v can be calculated by means of the Landauer-Buttiker formula [6,8]…”

Section: Negf Equationsmentioning

confidence: 99%

“…In the CNTFET considered in this work, the quantum confinement effect along the azimuthal direction gives rise to subbands, and the one‐dimensional (1D) effective‐mass Hamiltonian for the lowest subband of the nanotube can be defined as follows [6]

H = \frac{ℏ^{2} {normal∂}^{2}}{2 m_{z}^{*} {normal∂}^{2}} + E_{normalpot} (z)

where m * z is the effective mass in the z (transport) direction and E pot ( z ) is the 1D potential energy, which is defined according to the Flietner equations

\begin{matrix} right leftthickmathspace.5em \\ \begin{matrix} E_{normalpot} (z) = |E - E_{0} (z)| - Δ & if & |E - E_{0}| \geq Δ \end{matrix} \\ \begin{matrix} E - E_{normalpot} (z) = \frac{{(||, E - E_{0} false(z false))}^{2} - Δ^{2}}{2 Δ} & if & |E - E_{0}| ≺ Δ \end{matrix} \end{matrix}

In the above equation, E 0 ( z ) is the charge neutrality level and Δ is the energy distance between the bottom of the lowest subband and E 0 .…”

Section: Schottky Barrier Carbon Nanotube Field Effect Transistormentioning

confidence: 99%

“…The 2D cylindrical Poisson equation [6, 7],

\frac{{normal∂}^{2}}{normal∂ ρ^{2}} + \frac{1}{ρ} \frac{normal∂ ϕ}{normal∂ ρ} + \frac{\partial^{2} ϕ}{\partial z^{2}} = normal∂ \frac{q_{0}}{ε} \frac{1}{2 π R_{t}} false(P false(z false) - n false(z false) - N false(A false) false)

was solved to obtain the electrostatic potential ϕ ( ρ , z ), which reduces to the Laplace equation in the device (CNT) and gate insulator (oxide) regions, except for the CNT/oxide interface, because charges exist only at the CNT surface.…”

Section: Schottky Barrier Carbon Nanotube Field Effect Transistormentioning

confidence: 99%

“…We repeat the steps of solving the coupled 2D Poisson 1D NEGF equations until a self‐consistent potential is obtained. Once self‐consistency is achieved, the drain current for coherent transport under a bias voltage v can be calculated by means of the Landauer‐Buttiker formula [6, 8]

I false(V false) = \frac{4 q_{0}}{h} \int T false(E, V false) false[f_{normalS} false(E false) - f_{normalD} false(E false) false] normald E

where q is the electron charge, f S,D ( E ) are the Fermi functions at the source and drain sides and T ( E ) is the source to drain transmission.…”

Section: Schottky Barrier Carbon Nanotube Field Effect Transistormentioning

confidence: 99%

See 4 more Smart Citations

Asymmetric lightly doped Schottky barrier CNTFET

Raeini¹,

Kordrostami

2016

Micro & Nano Letters

View full text Add to dashboard Cite

For the first time, an asymmetric lightly doped Schottky barrier carbon nanotube field effect transistor (SB_CNTFETs) is proposed and simulated using quantum simulations. Comparisons are made among four SB_CNTFETs structures for electrical characteristics. One is the conventional SB_CNTFET with an intrinsic channel. The other proposed and studied designations are an asymmetrically doped SB_CNTFET with a doped region near the source only, a symmetrically doped source and drain SB_CNTFETand an asymmetric lightly doped SB_CNTFET which shows the ultimate performance among all. The results show that the new asymmetric lightly doped design decreases significantly the leakage current and thus increases on/off ratio as well as cutoff frequency. It is also demonstrated that this structure possesses two perceivable steps in potential profile of the channel, which lead to another lateral electric field peak inside the channel which leads to the immunity against short-channel effects. The cutoff frequency characteristics of the four structures of SB_CNTFETs have been discussed. Results show that for channel lengths >30 nm cutoff frequency of the asymmetric lightly doped SB_CNTFETis greater than others. The effect of different doped region lengths in a 30 nm SB_CNTFET has been discussed as well. The proposed new design is promising from several points of view discussed in the study.

show abstract

Section: Negf Equationsmentioning

confidence: 99%

Section: Negf Equationsmentioning

confidence: 99%

H = \frac{ℏ^{2} {normal∂}^{2}}{2 m_{z}^{*} {normal∂}^{2}} + E_{normalpot} (z)

where m * z is the effective mass in the z (transport) direction and E pot ( z ) is the 1D potential energy, which is defined according to the Flietner equations