Compact Modelling of the Hot-Carrier Degradation of Integrated HV MOSFETs

From Atoms to Circuits: Theoretical and Empirical Modeling of Hot Carrier Degradation

“…The chapters of Huard [6], Scholten [13], and Schlünder [14] discuss bridging the gap between device and circuit models. Hot carrier damage in various device types (LDMOS, FinFET, SiGe BJTs, and SiGe channel PFETs) is discussed in the chapters of Reggiani [15], Alagi [16], Cho [17], Chakraborty [18], and Franco [19]. The remainder of this chapter will discuss the atomic picture of HCD and bridging the gap from that picture to realistic circuit prediction.…”