Compact polarization-insensitive InGaAsP-InP 2 × 2 optical switch

Agashe, S.S.; Shiu, Kuen-Ting; Forrest, Stephen R.

doi:10.1109/lpt.2004.838286

Cited by 37 publications

(14 citation statements)

References 15 publications

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“…In the past 30 years, GaAs and InP-based compound semiconductor materials have played an important role in integrated optical devices [2] , especially in the development of high-speed optical switch [3] . Compound semiconductor based high optical switch mainly employ the electrooptic effect, and the carrier injection effect [4][5][6][7][8] . Because of the small electro-optic coefficient, switches based on electro-optic effect usually have large size or high driving voltage.…”

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confidence: 99%

Research of high speed optical switch based on compound semiconductor

Wang

Wei

et al. 2009

Chin. Sci. Bull.

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High-speed optical switch and its array are the crucial components of all-optical switching system. This paper presents the analytical model of a total-internal-reflection (TIR) optical switch. By employing the carrier injection effect in GaAs and the GaAs/AlGaAs double heterojunction structure, the X-junction TIR switch and the Mach-Zehnder interference (MZI) switch are demonstrated at 1.55 μm. The measured results show that the extinction ratio of both switches exceeds 20 dB. The switching speed reaches the scale of 10 ns.optical switch, total internal reflection, multimode interference, carrier injection Optical fiber communication technology has become the backbone of modern communication network, and formed enormous applications. As a key component of optical fiber communication system, optical switch and its array have been the focus of research and development [1] . High-speed optical switch and its large-scale arrays are essential for optical network based on optical packet switching (OPS). By employing various physical effects and technology, many types of optical switch have been developed. Among them, apart from the most traditional mechanical optical switches, there are many commercial products, e.g. the micro electro mechanical system (MEMS) based switch, the silica or organic polymer based waveguide switch, and the liquid crystal based switch. They have good performances in extinction ratio, insertion loss, polarization dependence and integration. However, most of them have a low switching speed, a magnitude of milliseconds (ms) typically. OPS based network requires that the switching speed reaches a magnitude of nanoseconds (ns), thus the high-speed optical switch and its arrays are very attractive.Compound semiconductor materials are used widely for high-speed microelectronic integrated devices. Besides, they are important material for optoelectronic devices and high-speed optical waveguide devices. Compound semiconductor is a promising platform for the optical and electronic integrated circuits (OEIC). In the past 30 years, GaAs and InP-based compound semiconductor materials have played an important role in integrated optical devices [2] , especially in the development of high-speed optical switch [3] . Compound semiconductor based high optical switch mainly employ the electrooptic effect, and the carrier injection effect [4][5][6][7][8] . Because of the small electro-optic coefficient, switches based on electro-optic effect usually have large size or high driving voltage. On the other hand, similar to the electro-optic effect of LiNbO 3 , the electro-optic coefficient of compound semiconductor is polarization-dependent as well. In the communication wavelength range of 1.31-1.55 μm, the refractive index change induced by the carrier injection effect is about two orders of magnitude greater than that by the electro-optic effect, and it is very easy to obtain a refractive index change as large as

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confidence: 99%

Research of high speed optical switch based on compound semiconductor

Wang

Wei

et al. 2009

Chin. Sci. Bull.

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“…Optical switches based on multimode interference (MMI) couplers, have gained considerable popularity in recent years. MMI couplers have compactness [5][6][7], relaxed fabrication tolerance, and low wavelength dependent loss (WDL) [8], as well as low polarization dependent loss (PDL) [9,10] and suitability for device integration [11] which are the subject of interest in high capacity WDM network. All these features make MMI an ideal choice compared to directional couplers or Y-branches.…”

Section: Introductionmentioning

confidence: 99%

A New Structure of Mmi Polymer Thermo-Optic Switch With a High Refractive Index Contrast

Al-hetar

Mohammad²,

Supa’at³

et al. 2010

PIER B

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Abstract-The 2 × 2 MMI polymer thermo-optic switch in a high refractive index contrast (0.102) with a new structure design is realized. This device was fabricated using standard fabrication techniques such as coating, photolithography, and dry etching. A crosstalk level of −36.2 dB has been achieved. Meanwhile the extinction ratio of 36.1 dB has been achieved in this device. The polarization dependent loss (PDL) of 0.3 dB and Insertion loss of 1.4 dB were measured at 1550 nm wavelength. In terms of wavelength dependency, the device shows a good performance within C-band wavelength with vacillation of the insertion loss value around 0.88 dB. The power consumption of 1.85 mW was measured to change the state of the switch from the cross to bar state. The measured switching time was 0.7 ms.

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“…In contrast, electro-optic switching holds great promise for use in optical networks due to its high-speed and lack of moving parts. However, it is also hampered by two drawbacks: if a waveguide structure is used the coupling losses tend to be high [5][6][7], but if a bulk structure is used then the voltage levels are close to lkV [8][9][10][11]. This thesis presents an optical switch that is fast and uses voltage levels that are less than 300V.…”

Section: Introductionmentioning

confidence: 99%