Compact Radar Front-End for an Imaging Radar at 300 GHz

Grajal, Jesús; Rubio-Cidre, Gorka; Badolato, Alejandro; Úbeda-Medina, Luis; García-Rial, Federico; García‐Pino, A.; Rubiños, Óscar

doi:10.1109/tthz.2017.2673544

Cited by 35 publications

(7 citation statements)

References 14 publications

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“…For electronic devices, a security application is demonstrated with commercialized sub-harmonics mixer at the 300-GHz band as a transceiver that uses a leaked LO signal as the THz source. Although the output power was only a few microwatts, a hidden weapon model could be detected at a distance of ~8 m distance [70].…”

Section: ) Integration To a Single Devicementioning

confidence: 99%

Towards Practical Terahertz Imaging System With Compact Continuous Wave Transceiver

Nishida

Sagisaka

et al. 2021

J. Lightwave Technol.

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Terahertz (THz) imaging techniques have attracted significant attention and have developed rapidly in recent years. However, despite several advances, these techniques are still not mature, and their high cost and system complexity continue to limit their applications. In this article, the techniques for achieving a practical imaging system with a compact THz transceiver are addressed, while considering the limitations of the current technique. The aim is to provide a brief review of related topics, while also covering our recent progress, which can provide some general perspectives and contrasting approaches for realizing a practical THz imaging system. The continuous wave devices are mainly focused for their flexibility of balancing the imaging resolution and data acquisition time. The importance of transceiver integration is also discussed and illustrated by introducing a 600-GHz band micro-photonic interface for integrating a THz source and detector, with a single resonant tunneling diode as a transceiver. With regard to system issues, spatial sampling with mechanical beam-scanning is discussed as an intermediate approach for moving stage and array technology. The potential and limitations of this approach are evaluated, along with an elliptical reflector as an alternative to an f-theta lens owing to its low cost and simplicity. The combination of integrated devices, along with the mechanical beam-scanning, is also discussed for demonstrating our current concept of realizing a practical THz imaging system.

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Section: ) Integration To a Single Devicementioning

confidence: 99%

Towards Practical Terahertz Imaging System With Compact Continuous Wave Transceiver

Nishida

Sagisaka

et al. 2021

J. Lightwave Technol.

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“…In the microwave domain, low phase noise oscillators have been widely used both in the scientific and industrial world such as radars, communications, radio astronomy, and particle accelerators [3][4][5]. Recently, the demand for oscillators in the mm and THz ranges has been expanded mainly for next-generation communication (5G and 6G), including radars, molecular clocks, and wireless communications [6][7][8][9]. Optical frequency combs [10] based on mode-locked fiber or solid-state lasers coherently connect the optical and microwave frequency through photodetection, where ultra-low phase noise of the repetition frequency ( f rep : repetition frequency) is faithfully transferred to microwaves [11][12][13], reaching the shot noise floor of -170 dBc/Hz at the 1-kHz frequency offset with 1/ f ( f : frequency offset from a carrier) slope for a 12 GHz carrier [12].…”

Section: Introductionmentioning

confidence: 99%

Low phase noise THz generation from a fiber-referenced Kerr microresonator soliton comb

Kuse¹,

Nishimoto²,

Tao³

et al. 2022

Preprint

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THz oscillators generated via frequency-multiplication of microwaves are facing difficulty in achieving low phase noise. Photonics-based techniques, in which optical two tones are translated to a THz wave through opto-electronic conversion, are promising if the relative phase noise between the two tones is well suppressed. Here, a THz (≈ 560 GHz) wave with an unprecedented phase noise is provided by a frequency-stabilized, dissipative Kerr microresonator soliton comb. The repetition frequency of the comb is stabilized to a long fiber in a two-wavelength delayed self-heterodyne interferometer, significantly reducing the phase noise of the THz wave. A new measurement technique to characterize the phase noise of the THz wave beyond the limit of a frequency-multiplied microwave is also demonstrated, showing the superior phase noise of the THz wave to any other THz oscillators (> 300 GHz).

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“…Reflecting the development at terahertz frequencies, many unique applications have appeared including the imaging radar at 220 GHz, the high‐data‐rate communications at 240 GHz, and many other newly minted application . However, the lack of broadband and high‐power terahertz sources is a serious obstacle to THz technology.…”

Section: Introductionmentioning

confidence: 99%

180 to 240 GHz broadband, EM‐based power amplifier using 0.5‐μm InP DHBT technology

Zhang

Xiao

et al. 2019

Int J Numerical Modelling

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This paper reports a power amplifier (PA) terahertz monolithic integrated circuit (TMIC) from 180 to 240 GHz. This amplifier is fabricated from a 0.5-μm indium phosphide double heterojunction bipolar transistor (InP DHBT) technology, jointly with a thin-film microstrip wiring environment. Furthermore, an electromagnetic (EM) simulation method is proposed for the parameter extraction of InP DHBTs and amplifier design. This five-stage amplifier has >6.1 dB S 21 gain from 180 to 240 GHz, peaks 10.4 dB S 21 gain at 210 GHz. At 213 GHz operation, the saturated output power is 5.8 dBm with 7.3 dB large-signal gain, and this amplifier occupies 2.52 mm 2 including pads. KEYWORDSEM-based simulation method, InP DHBT, power amplifier, TMIC | INTRODUCTIONReflecting the development at terahertz frequencies, many unique applications have appeared including the imaging radar at 220 GHz, 1 the high-data-rate communications at 240 GHz, 2 and many other newly minted application. 3 However, the lack of broadband and high-power terahertz sources is a serious obstacle to THz technology. To address this problem, many researchers put a lot of effort into the research of semiconductor devices. As a result, InP HEMTs and InP HBTs have been demonstrated with maximum frequencies of oscillation ( f max ) exceeding 1 THz. 4-6 Besides, benefited from high electron mobility and breakdown voltage, InP DHBTs have been a preferred technology in the monolithic integrated circuits operating at terahertz frequencies. 5 A more accurate transistor model will be necessary to predict the performance of the TMIC with the increase of frequency. However, the accuracy and reliability of the model is affected by sensitive components to parasitic effects at terahertz frequency. The emergence of the 3D electromagnetic simulation method makes it possible to characterize various effects operating at terahertz frequencies, and this method has been implemented on on-wafer parasitic parameter de-embedding and peripheral passive element extraction. [7][8][9] In this paper, based on our previous work, 10-14 an electromagnetic (EM) simulation method is proposed for the parameter extraction of DHBTs, and a 220 GHz PA TMIC using 0.5-μm InP HBT technology is designed. This amplifier offers over 6.1 dB small-signal gain from 180 to 240 GHz, while 5.8 dBm saturated output power at 213 GHz.

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Compact Radar Front-End for an Imaging Radar at 300 GHz

Cited by 35 publications

References 14 publications

Towards Practical Terahertz Imaging System With Compact Continuous Wave Transceiver

Towards Practical Terahertz Imaging System With Compact Continuous Wave Transceiver

Low phase noise THz generation from a fiber-referenced Kerr microresonator soliton comb

180 to 240 GHz broadband, EM‐based power amplifier using 0.5‐μm InP DHBT technology

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