Compact Si-based asymmetric MZI waveguide on SOI as a thermo-optical switch

Rizal, Conrad; Niraula, Boris B.

doi:10.1016/j.optcom.2017.10.007

Cited by 23 publications

(25 citation statements)

References 36 publications

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“…Change in refractive index along the length of an optical waveguide leads to change in mode propagation constant of the optical signal. Refractive index in a Si waveguide can be tuned using two effects: free career plasma dispersion and thermo-optical effect, similarly to the ones we reported earlier [19]. The thermo-optical effect is relatively stronger as Si exhibits a strong thermo-optical coefficient of dn/dT = -1.8 × 10 -4 /K at 300 K.…”

Section: Thermo-optic Heaterssupporting

confidence: 67%

“…5 m of width and 0.22 m of thickness. In analogy to reference [19], two mesh override regions were used. The device was the sent to IMEC Belgium for fabrication, and the measurement was performed at the Nano-Optics Laboratory at the Department of Electrical and Computer Engineering, the University of British Columbia.…”

Section: Figmentioning

confidence: 99%

“…Similarly to Ref [19], a heating element is incorporated in one of the phase shifter arms to realize thermo-optical switching and a specially designed heating pad is used to heat this arm. It consists of thin Al pad and can be placed on the phase shifting arm directly.…”

mentioning

confidence: 99%

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2x4 Hybrid MZI-MMI Configuration with MMI Phase-shifters as a High-speed Optical Switch with Low Power Consumption

Niraula¹,

Rizal²

2019

Preprint

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This paper reports 2 × 4 hybrid Mach-zehnder interferometer (MZI) - multi-mode interferometers (MMI) based compact thermo-optical switch consisting of slab waveguides on silicon-on-insulator, SOI, platform. The device consists of two identical MMIs, each of 6 μm wide and 140 μm long connected with two phase shifters MMIs each with 2 μm wide and 8 μm long and linear tappers each 4 μm long, connected at both ends of the MMIs to minimize the power coupling loss. The loss for linear taper is found to be below 0.02dB. The footprint of the whole device is six 6 μm × 324 μm. This structure is based on unique multimode region shape, which leads optical switch to have less coupling loss and reduced cross-talk. The average thermo-optical switching power consumption is 1.4 mW, the excess losses are 0.8 dB, and the imbalances are 0.1 dB. Aluminum is used as a heating pad, and a trench is created around this pad to prevent from spreading of heat and reduce power loss almost by a factor of 2 to the adjacent phase shifter. Our new heating method has advantages of compact size and ease of fabrication with the current CMOS technology.

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Section: Thermo-optic Heaterssupporting

confidence: 67%

Section: Figmentioning

confidence: 99%

See 1 more Smart Citation

2x4 Hybrid MZI-MMI Configuration with MMI Phase-shifters as a High-speed Optical Switch with Low Power Consumption

Niraula¹,

Rizal²

2019

Preprint

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“…Generally, these functions require a high-order (N × N) optical switching platform, which relies on a matrix of 2 × 2 optical switching units [4,5]. Different configurations and material systems have been reported in the literature to design and implement the 2 × 2 optical switches but most of them stand heavily on silicon photonic-based Mach-Zehnder (MZ) configurations supported by thermo-optic [6,7] and electro-optic (EO) switching mechanisms [8,9]. The EO MZ switch (MZS) offers a robust structure, along with high-speed and wide-optical band operation [10].…”

Section: Introductionmentioning

confidence: 99%

Design Investigation of 4 × 4 Nonblocking Hybrid Plasmonic Electrooptic Switch

2019

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This paper proposes a compact, plasmonic-based 4 × 4 nonblocking switch for optical networks. This device uses six 2 × 2 plasmonic Mach-Zehnder switch (MZS), whose arm waveguide is supported by a JRD1 polymer layer as a high electro-optic coefficient material. The 4 × 4 switch is designed in COMSOL environment for 1550 nm wavelength operation. The performance of the proposed switch outperforms those of conventional (nonplasmonic) counterparts. The designed switch yields a compact structure ( 500 × 70 µ m 2 ) having V π L = 12 V · µ m , 1.5 THz optical bandwidth, 7.7 dB insertion loss, and −26.5 dB crosstalk. The capability of the switch to route 8 × 40 Gbps WDM signal is demonstrated successfully.

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“…The thermo-optic effect is one option, due to the large thermo-optic coefficient of silicon (1.8 × 10 -4 RIU/K) [103]. Based on Mach-Zehnder Interferometer (MZI) structure [104,105] or ring resonator structure [106,107], very compact and low loss thermo-optic modulators have been developed. An optical microelectro-mechanical system (MEMS) device is another option for the modulator.…”

Section: Modulators and Switchesmentioning

confidence: 99%

Integrated photonic chip for quantum key distribution

Zhang¹

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Silicon photonic technologies exploit silicon as an optical material to build a wide array of devices and systems. It has a vast and growing market in fields such as telecommunications, sensors, displays, and biomedical instrumentations. The flexibility, modularity and stability of silicon photonic systems provide unprecedented opportunities for next-generation quantum key distribution (QKD) and quantum networking. This doctoral thesis focuses on the design, simulation, fabrication, and experiment of QKD chips based on silicon photonics. Crucial components for QKD chips are designed and fabricated, including the grating coupler, polarization beam splitter, polarization rotator, modulator, photodetector, ring resonator and interferometer. Using these components, chip-based continuous variable quantum key distribution (CV-QKD) is demonstrated for the first time. The thesis focuses on three parts: the passive components, the active components, and the integrated QKD chip. For the passive components, the twodimensional grating coupler can be used as a path-to-polarization mode converter, the polarization beam splitter separates or combines two polarization states on-chip, and the polarization rotator rotates the polarization state between transverse electric and transverse magnetic modes. All the polarization manipulation components are essential for expanding the available degree of freedom of the photon. The Mach-Zehnder interferometer and ring resonator are the core components used in the modulator. Both are designed, simulated, fabricated and experimentally characterized. Active components, including modulators and detectors are also studied in this thesis. For modulator, a thermo-optic modulator and a carrier injection modulator are Nomenclature XXII Nomenclature ALD Atomic layer deposition AM Amplitude modulator ASE Amplified spontaneous emission BARC Bottom anti-reflective coating Bps Bits per second CMOS Complementary metal-oxide-semiconductor CMP Chemical-mechanical planarization COW Coherent one way CVD Chemical vapor deposition CV-QKD Continuous variable QKD CW Continuous wave

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Compact Si-based asymmetric MZI waveguide on SOI as a thermo-optical switch

Cited by 23 publications

References 36 publications

2x4 Hybrid MZI-MMI Configuration with MMI Phase-shifters as a High-speed Optical Switch with Low Power Consumption

2x4 Hybrid MZI-MMI Configuration with MMI Phase-shifters as a High-speed Optical Switch with Low Power Consumption

Design Investigation of 4 × 4 Nonblocking Hybrid Plasmonic Electrooptic Switch

Integrated photonic chip for quantum key distribution

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