Digest of Papers. 2005 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2005.
DOI: 10.1109/smic.2005.1588005
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Compact SiGe HBT low noise amplifiers for 3.1-10.6 GHz ultrawideband applications

Abstract: -Two compact SiGe HBT low noise amplifiers for ultra-wideband (UWB) applications are presented. The measured noise figure of the first approach is 2.4dB at 7GHz and below 2.9dB in the UWB bandwidth from 3.1GHz up to 10.6GHz. The circuit delivers 17.3dB peak gain with gain variations of less than 1.6dB within the entire band. The measured input 1-dB compression point at 7GHz is -13.5dBm with 16.6mA total current consumption from a 3.3V supply. The second approach exhibits noise figures between 2.8dB and 3.2dB w… Show more

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Cited by 6 publications
(4 citation statements)
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“…Reverse isolation is better than 37 dB across the 3.1 to 10.6 GHz band. The [5] 2.9 0.87 15.1 ± 1.4 S 11,max < −9.9 9 (3.0-11) (3.1-10.6) (3.1-10.6) 0.18µm SiGe HBT BiCMOS [2] 3.1 0.72 20.3 − 3.5 S 11,max < −7.2 26 (without buffer) (3.0-10.0) (3.0-10.0) (3.0-10.0) 0.8µm SiGe HBT [6] 3.2 0.17 23.5 − 0.6 S 11,max < −8.5 55 (3.1-10.6) (3.1-10.6) (3.1-10.6) 0.18µm SiGe BiCMOS [7] 3.3 0.88 13 − 3 S 11,max < − 7 measured 50 Ω noise figure is depicted in Fig. 6.…”
Section: Measurement Resultsmentioning
confidence: 99%
“…Reverse isolation is better than 37 dB across the 3.1 to 10.6 GHz band. The [5] 2.9 0.87 15.1 ± 1.4 S 11,max < −9.9 9 (3.0-11) (3.1-10.6) (3.1-10.6) 0.18µm SiGe HBT BiCMOS [2] 3.1 0.72 20.3 − 3.5 S 11,max < −7.2 26 (without buffer) (3.0-10.0) (3.0-10.0) (3.0-10.0) 0.8µm SiGe HBT [6] 3.2 0.17 23.5 − 0.6 S 11,max < −8.5 55 (3.1-10.6) (3.1-10.6) (3.1-10.6) 0.18µm SiGe BiCMOS [7] 3.3 0.88 13 − 3 S 11,max < − 7 measured 50 Ω noise figure is depicted in Fig. 6.…”
Section: Measurement Resultsmentioning
confidence: 99%
“…The LNA uses a combination of intra-and inter-stage feedback networks to broaden the bandwidth in terms of noise performance, input return loss, gain and group delay flatness. On-wafer measurements of the LNA in a 50 Ω test environment show a gain of 23.2 ± 0.3 dB, a worst case input return loss of 8.5 dB and a maximum 3.2 dB noise figure across the full 3.1-to-10.6 GHz band [4]. The necessary phase adjustment between the incoming waveforms and the template pulses is performed with the clock feeding the template pulse generator (CLK TS ) which obviates the need for a wideband adjustable true time delay.…”
Section: Mmic Architecturementioning
confidence: 99%
“…It features a 23-dB flat gain response and a state-of-the-art noise figure of 2.8 dB in the middle of the 3.1-10.6-GHz band. A detailed evaluation of the separately characterized LNA can be found in [20]. For the multiplication operation, a four-quadrant fully balanced Gilbert-cell multiplier is applied and converters (baluns) are placed at the input for a conversion of the single-ended LNA and template IPG signals to the differential inputs of the Gilbert-cell multiplier.…”
Section: B Hardware Correlation Receivermentioning
confidence: 99%