Compact thermal noise model for enhancement mode N‐polar GaN MOS‐HEMT including 2DEG density solution with two sub‐bands

Abstract

A 135 nm gate length-based low noise enhancement mode N-polar double deck T-shaped gate Gallium Nitride (GaN) Metal Oxide Semiconductor (MOS)-high electron mobility transistor with double insulating layer of high-k dielectrics ZrO 2 /HfO 2 is proposed. The device exhibits maximum transconductance of 0.55 S/mm, maximum drain current density of 1.4 A/mm and minimum noise figure (NF min) of 0.72 dB at 20 GHz. A compact model for Two Dimensional Electron Gas (2DEG) density is developed by explicit solution of surface potential and Fermi level by considering first two sub-bands of triangular quantum well without using any numerical methods. Based on the surface potential drain current, intrinsic charge, gate capacitance, small signal and thermal noise models are developed. To validate the proposed numerical model, the results are calibrated with TCAD device simulation results and available experimental data from literatures.

Airy Function-Based Model for 2-DEG Charge and Surface Potential in N-Polar Gallium Nitride Heterostructures

“…email: 121704001@smail.iitpkd.ac.in, arvindajoy@iitpkd.ac.in Most models [16]- [26] for GaN HEMTs focus on the Gapolar orientation. There are only a few papers [27], [28] dealing with N-polar HEMTs. These models are derived assuming that the 2-DEG lies in a triangular quantum well with infinite confinement, such that the wave function is zero beyond the channel-spacer interface.…”

Single and double‐gate based AlGaN/GaN MOS‐HEMTs for the design of low‐noise amplifiers: a comparative study

“…In recent years, GaN‐based high‐electron‐mobility transistors (HEMTs) have emerged as promising candidates for microwave low‐noise applications due to their inherent remarkable material properties [1, 2]. These devices have tremendously attracted radio‐frequency (RF) circuit design engineers to design power amplifiers (PAs) [3] and low‐noise amplifiers (LNAs) [4, 5], which can be used for the next generation RF front end transceivers.…”

Dielectric Modulated Enhancement Mode N-Polar GaN MIS-HEMT Biosensor for Label Free Detection

“…Nowadays group III-V based devices have emerged as an Out of all III-V based devices high group III-Nitride based high electron mobility transistors (HEMTs) are emerged as the most promising candidate due to their high power and high-frequency applications. [14][15][16][17][18][19][20][21][22][23][24] Schwarz et al have proposed a HEMT-based sensor using photochemical functionalization for DNA detection. 25 Khazanskaya et al have proposed FET-based biosensor for the detection of urea and ammonium ions.…”